DMN61D8LVT-13 Allicdata Electronics

DMN61D8LVT-13 Discrete Semiconductor Products

Allicdata Part #:

DMN61D8LVT-13DITR-ND

Manufacturer Part#:

DMN61D8LVT-13

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET 2N-CH 60V 0.63A TSOT26
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 630mA 820mW Su...
DataSheet: DMN61D8LVT-13 datasheetDMN61D8LVT-13 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.11469
Stock 1000Can Ship Immediately
$ 0.13
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Power - Max: 820mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26
Description

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DMN61D8LVT-13 Application Field and Working Principle

The DMN61D8LVT-13 is a high power, double-poly MOSFET array package, specifically designed for high power applications in the automotive market. It integrates two 30-V N-channel MOSFETs in a Flip-Chip package to provide excellent performance and easy application. This device has a maximum drain-source voltage rating of 70V, a drain-source on resistance of 5 milliohms, and a high current rating of 115 Amp. The device also offers low gate charge, fast body diode recovery time, and high-speed switching. The DMN61D8LVT-13 can be used in a wide variety of applications including power supplies, motor drives, motor control, DC switching, and automotive applications.

Working Principle

The MOSFET array consists of two MOSFETs, connected in parallel, with their source and gates connected to the integrated circuit. In this configuration, the gates control the drain-source voltage and current simultaneously. When a voltage is applied to the gate terminal, it creates a positive voltage between the drain and source of the MOSFETs. This positive voltage attracts a current in the opposite direction, which forces electrons to flow between the drain and source. As the MOSFETs increase their resistance, the current decreases and the voltage between the drain and source decreases. When the voltage goes below the predetermined threshold, the MOSFETs stop conducting, turning off the current flow between the drain and source.

Applications

The DMN61D8LVT-13 is designed for use in a variety of applications requiring high power. It offers excellent performance and superior power conversion capabilities, making it an ideal choice for automotive, power supply, motor drive, and numerous other power management applications. The MOSFET array package is especially suitable for high power applications, allowing for more efficient operation and a much lower overall power consumption. The array offers superior efficiency and higher currents, enabling engineers to extend the range of their designs. The device is also Thermal-Aware, meaning it can provide accurate thermal monitoring for improved reliability and more efficient operation.

Conclusion

The DMN61D8LVT-13 is a high power, double-poly MOSFET array package, specifically designed for high power applications in the automotive market. It integrates two 30-V N-channel MOSFETs in a Flip-Chip package to provide excellent performance and easy application. The device provides low gate charge, fast body diode recovery time, and high-speed switching. It is suitable for power supplies, motor drives, motor control, DC switching, automotive applications, and numerous other power management applications.

The specific data is subject to PDF, and the above content is for reference

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