DMN6066SSD-13 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	3V @ 250µA
Base Part Number:	DMN6066SSD
Supplier Device Package:	8-SOP
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power - Max:	1.8W
Input Capacitance (Ciss) (Max) @ Vds:	502pF @ 30V
Gate Charge (Qg) (Max) @ Vgs:	10.3nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	66 mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C:	3.3A
Drain to Source Voltage (Vdss):	60V
FET Feature:	Logic Level Gate
FET Type:	2 N-Channel (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The DMN6066SSD-13 is part of a general family of N-channel MOSFETS which are developed to be used in a variety of switching and driver applications. The device is capable of providing consistent and reliable performance and is available in a wide range of packages, allowing designers to tailor the device to their specific applications.

Application Field

The DMN6066SSD-13 is an N-channel MOSFET with a wide range of uses in a variety of different applications. This makes it well suited to use in a variety of high-power, high-voltage applications ranging from switching power supplies, motor control, and solenoid controls. The device is also suitable for use in automotive, industrial, and consumer applications.The DMN6066SSD-13 is also capable of providing reliable performance in various high-speed digital applications such as high-speed switching and logic level shifters. Due to its low input capacitance and high-speed turn-on characteristics, the device is well suited to be used in applications such as Ethernet, HDMI and USB switching.

Features

The DMN6066SSD-13 features a high output current capability of up to 5.25A, making it suitable for a variety of applications which require high-current switching and driving. Additionally, the device features a low on-resistance of 2.7mohm, making it well suited for low power-dissipation applications. Furthermore, the device has a drain-source breakdown voltage of 600V, which makes it suitable for use in high-voltage applications.Another key feature of the DMN6066SSD-13 is its range of different packages, helping designers to tailor the devices to their specific applications. These packages range from TO-220 to TO-92, making the device well suited for use in a variety of small-form factor applications. The package also provides increased thermal dissipation compared to other packages, allowing for improved performance in high-temperature applications.

Working Principle

The DMN6066SSD-13 is an N-channel MOSFET, meaning it consists of an array of N-Type transistors connected in parallel. The N-Type transistors are used as an electronic switch, in which current is allowed to flow when a voltage signal is applied. When the voltage is removed, the device automatically reverts back to its original state, with no current flowing through it.The device is able to regulate its own current output, as the gate voltage’s effect on the drain-source voltage is controlled by the device\'s internal resistance. This is critical for power control and efficiency in a variety of applications, particularly where consistent and reliable switching is required.

Conclusion

The DMN6066SSD-13 is a general family of N-channel MOSFETS designed to be used in a variety of switching and driver applications. The device features a high output current capability of up to 5.25A, a low on-resistance of 2.7 mohm, and a drain-source breakdown voltage of 600V. Additionally, the device is available in a wide range of packages allowing designers to tailor the device to their specific applications. The device is capable of providing reliable performance in a variety of high-current and high-voltage applications and is well suited for use in industrial, automotive, and consumer applications. The device\'s array of N-Type transistors allows it to regulate its own current output and provides consistent and reliable switching for power control and efficiency.

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