EPC2030ENGRT Discrete Semiconductor Products |
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Allicdata Part #: | 917-EPC2030ENGRTR-ND |
Manufacturer Part#: |
EPC2030ENGRT |
Price: | $ 3.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | EPC |
Short Description: | MOSFET NCH 40V 31A DIE |
More Detail: | N-Channel 40V 31A (Ta) Surface Mount Die |
DataSheet: | EPC2030ENGRT Datasheet/PDF |
Quantity: | 5500 |
500 +: | $ 2.97060 |
Vgs(th) (Max) @ Id: | 2.5V @ 16mA |
Package / Case: | Die |
Supplier Device Package: | Die |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | -- |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1900pF @ 20V |
Vgs (Max): | +6V, -4V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 5V |
Series: | eGaN® |
Rds On (Max) @ Id, Vgs: | 2.4 mOhm @ 30A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 31A (Ta) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | GaNFET (Gallium Nitride) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The EPC2030ENGRT is a N-channel enhancement-mode, field effect transistor (FET) with a single structure. It is designed specifically for driving high-power applications such as audio amplifiers, where high peak output power is required. It is a power MOSFET device, which is more reliable and durable than conventional FETs due to its extended temperature range and improved switching speed.
The EPC2030ENGRT operates in the field-effect (enhancement-mode) mode and is used in combination with a power MOSFET to control the output voltage. When the device is driven by a logic signal, the gate-source voltage increases, resulting in a reduction of the back-channel resistance and an increase in the drain-source voltage. This increase in voltage is used to drive higher output power, as well as providing fast switching performance. As the voltage increases, the power MOSFET is able to turn on at a higher current and move more charge, allowing for greater output power.
The operating principles of the EPC2030ENGRT are based on the well-known JFET (Junction Field-Effect Transistor) principles. When biased within its operational range, the EPC2030ENGRT can provide a fast, linear response to gate voltage changes, allowing it to accurately control the on/off switch of the power MOSFET connected to it. The device can also be used to control the current in an LED system, allowing for a better control of the light intensity and improved performance.
The EPC2030ENGRT is suitable for use in a variety of high-power applications due to its low gate-source voltage, high drain-source voltage, and high power ratings. With its extended temperature range, it is capable of operating in temperatures from -20°C to +125°C. It is also capable of driving up to a maximum reverse voltage of -20V, which allows it to be used in systems operating at higher voltages. The device also features fast switching speed and low gate-to-source capacitance, making it suitable for driving high-power motors and actuators.
The EPC2030ENGRT is a great choice for applications requiring reliable, fast switching and high output power. It can be used in a variety of applications, including automation systems, motor control, audio amplifiers, LED lighting, and much more. With its wide operating temperature range and high power ratings, it is an excellent choice for driving high-power applications.
The specific data is subject to PDF, and the above content is for reference
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