FDMC6675BZ-T Allicdata Electronics
Allicdata Part #:

FDMC6675BZ-T-ND

Manufacturer Part#:

FDMC6675BZ-T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: INTEGRATED CIRCUIT
More Detail:
DataSheet: FDMC6675BZ-T datasheetFDMC6675BZ-T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Last Time Buy
FET Type: --
Technology: --
Current - Continuous Drain (Id) @ 25°C: --
Drive Voltage (Max Rds On, Min Rds On): --
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
Vgs (Max): --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: --
Supplier Device Package: --
Package / Case: --
Description

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Introduction

The FDMC6675BZ-T is a high-performance power MOSFET from Fairchild Semiconductor, which is specifically suitable for high-frequency switching applications like DC-DC converters, power inverters, and industrial motor driving. This device incorporates advanced low RDS(on) technology and is built on a low profile transistor package. The FDMC6675BZ-T is optimized to reduce gate charge and on-resistance, making it an excellent choice for high-frequency applications. In this article, we will explore the application field and working principle of the FDMC6675BZ-T.

Application Field

The FDMC6675BZ-T is designed to be used in applications like High Frequency DC-DC Converters, Industrial Motor Driving, and Power Inverters, including DC-DC convertors for distributed power systems or notebook computer power supplies. It is particularly useful for applications involving automotive temperatures, such as gate-driver applications in a Hybrid Electric Vehicle (HEV) and other complex, yet high frequency power applications.

Working Principle

The FDMC6675BZ-T is a power MOSFET, which is a specific type of transistor. It is a four-terminal device and is controlled by two gates: the main gate and the auxiliary gate. The main gate is used to control the amount of electrical current that is flowing in the device. The auxiliary gate is used to regulate the threshold voltage, or the voltage at which the device begins to conduct current.The FDMC6675BZ-T works by using an electric field created between the drain and source. When a voltage is applied to the main gate, the electric field between the drain and source creates an electrical current between the two terminals, allowing a large amount of current to flow through the device. The threshold voltage can be adjusted with the auxiliary gate for higher accuracy in the amount of current flowing through the device.

Conclusion

The FDMC6675BZ-T is a powerful and efficient power MOSFET that is designed specifically for high-frequency applications such as DC-DC converters, power inverters, and industrial motor driving. It works by using an electric field between the drain and source to create an electrical current, and the threshold voltage can be adjusted with the auxiliary gate. The FDMC6675BZ-T is optimized to reduce gate charge and on-resistance, making it an excellent choice for high-frequency applications.

The specific data is subject to PDF, and the above content is for reference

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