FDMC4435BZ Discrete Semiconductor Products |
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Allicdata Part #: | FDMC4435BZTR-ND |
Manufacturer Part#: |
FDMC4435BZ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 30V 8.5A POWER33 |
More Detail: | P-Channel 30V 8.5A (Ta), 18A (Tc) 2.3W (Ta), 31W (... |
DataSheet: | FDMC4435BZ Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-MLP (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.3W (Ta), 31W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2045pF @ 15V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 46nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 8.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 8.5A (Ta), 18A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDMC4435BZ is a high-powered, low-resistance n-channel enhancement mode Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) that has excellent switching characteristics and is ideal for a wide range of applications. This component is suitable for digital, display and audio amplifier applications. It is made up of a source, drain and gate terminals, with a substrate (insulating layer) in between. The gate terminal is used to control the current flow between the source and drain terminals.
The main feature of this MOSFET is its low on-resistance and high power ratings. The FDMC4435BZ has an on-resistance rating of 0.15Ω and a maximum continuous drain current rating of 28A. It also has a maximum single pulse drain current rating of 140A. These power rating are very impressive considering its small size and low gate capacitance.
The small size of this MOSFET makes it ideal for applications where a small and compact component is needed for switching or controlling heavy loads. Examples of this include battery-powered devices such as personal digital assistants (PDAs), notebook computers and mobile phones, as well as and consumer electronic devices like DVD players and satellite water heaters.
The FDMC4435BZ is also used in many high-power applications such as motor control, high-end audio amplifiers, DC-DC power converters, power factor correction (PFC) and photovoltaic (PV) systems. Due to its high power rating, MOSFETs are often used in switching voltage regulators, motor speed control circuits and battery-powered electronic equipment.
When it comes to its working principle, the FDMC4435BZ is based on the Metal-Oxide-Semiconductor principle. In this type of device, the substrate, also known as the insulating layer, is sandwiched between two metal layers. When a voltage is applied to the gate terminal, it causes the metal-oxide layer to become electrically conductive, allowing current to flow between the source and drain terminals.
The FDMC4535BZ MOSFET is a versatile and reliable device that is well suited for a variety of applications. Its low on-resistance and high power ratings make it an ideal solution for battery-powered electronics, high-end audio amplifiers, and motor control applications. Its small size and ease of use make it an excellent choice for designers and engineers. Moreover, its highly efficient Metal-Oxide-Semiconductor working principle make this device a go-to choice for applications that demand high power and low resistance.
The specific data is subject to PDF, and the above content is for reference
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