| Allicdata Part #: | FDMC8882FSTR-ND |
| Manufacturer Part#: |
FDMC8882 |
| Price: | $ 0.14 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 30V 8-MLP |
| More Detail: | N-Channel 30V 10.5A (Ta), 16A (Tc) 2.3W (Ta), 18W ... |
| DataSheet: | FDMC8882 Datasheet/PDF |
| Quantity: | 3000 |
| 1 +: | $ 0.14400 |
| 10 +: | $ 0.13968 |
| 100 +: | $ 0.13680 |
| 1000 +: | $ 0.13392 |
| 10000 +: | $ 0.12960 |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | 8-PowerWDFN |
| Supplier Device Package: | 8-MLP (3.3x3.3) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.3W (Ta), 18W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 945pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 14.3 mOhm @ 10.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 10.5A (Ta), 16A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The FDMC8882 is a single N-channel enhancement-mode, vertical DMOS FET in a 6-pin SOIC package. This device is designed for high-speed switching in a variety of applications including computer game controllers and digital set-top boxes. With its low RDS(on) value, low on-state resistance, and low gate charge, the FDMC8882 is ideal for high speed switching applications.
The FDMC8882 is a DMOS device. This stands for “Diffused Metal-Oxide Semiconductor”. The device is constructed of an N-type silicon wafer, which forms the drain and source electrodes. The silicon wafer is then covered with an insulating silicon dioxide layer. Above this layer is a thin layer of doped polysilicon which acts as the gate, and is insulated from the silicon wafer using the porous dielectric layer of gate oxide. This gate oxide layer provides the control of the device by changing the voltage at the gate.
The FDMC8882 operates in the enhancement mode, which means that the FET can only be turned on through biasing the gate voltage to a level above the threshold voltage of the device. This process is called “enhancement”, as it increases the conductivity (or ‘on-state’ resistance) of the device, allowing it to conduct current.
The device is designed to have a low RDS(on) value, which is a measure of the on-state resistance of the device. It is defined as the resistance between the drain and source electrodes when the FET is in the ‘on’ state. This value is important for high-speed switching applications, as it determines how quickly the device can switch from the ‘on’ to the ‘off’ state.
The low gate charge of the device is also important for high-speed switching applications. It is defined as the amount of charge that needs to be supplied to the gate of the device in order to turn it on or off. The lower the gate charge, the faster the device can switch between the ‘on’ and ‘off’ states.
The FDMC8882 is ideal for a wide range of applications, including motor control, solenoid driver, active filter, power switching, and power line protection. It can be used to drive motors in robotics applications, or to provide active filtering and voltage regulation in power supplies. The low on-state resistance of the device makes it suitable for high speed switching applications, such as digital set-top boxes and computer game controllers.
In summary, the FDMC8882 is a single N-channel DMOS FET with a low RDS(on) value and low gate charge. This device is designed for high-speed switching applications such as motor control, solenoid driver, active filter, and power switching. It can also be used in computer game controllers and digital set-top boxes.
The specific data is subject to PDF, and the above content is for reference
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FDMC8882 Datasheet/PDF