| Allicdata Part #: | FDMC86259PTR-ND |
| Manufacturer Part#: |
FDMC86259P |
| Price: | $ 0.61 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET P-CH 150V 13A POWER33 |
| More Detail: | P-Channel 150V 3.2A (Ta), 13A (Tc) 2.3W (Ta), 62W ... |
| DataSheet: | FDMC86259P Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.60800 |
| 10 +: | $ 0.58976 |
| 100 +: | $ 0.57760 |
| 1000 +: | $ 0.56544 |
| 10000 +: | $ 0.54720 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | 8-PowerWDFN |
| Supplier Device Package: | Power33 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.3W (Ta), 62W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2045pF @ 75V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 107 mOhm @ 3A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 3.2A (Ta), 13A (Tc) |
| Drain to Source Voltage (Vdss): | 150V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The FDMC86259P is a depletion-mode a P-Channel Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET) device, sometimes known as an insulated-gate FET (IGFET), which forms the basis of modern electronics. This component offers a variety of features, including integrated dynamic drain and source resistance control, high frequency switching with low on-resistance, and reduced power consumption. It is suitable for a range of industrial and consumer applications, such as power management, dc-dc converters, motor control, automotive headlights, low-voltage contactors and other lighting systems.
The FDMC86259P works by using gate, source and drain terminals to control a current flow between the source and the drain. The size of the current and the "on" resistance can be determined by the voltage applied across the gate. This voltage is known as the "gate voltage". When the gate voltage is below a certain threshold, a depletion region is created, which prevents current to flow through the die. This is known as the "off state". When the gate voltage is increased, electrons are attracted to the gate and form a conducting region, allowing current to flow between the source and the drain. This is known as the "on state".
The FDMC86259P is an ideal component for power management applications. It operates with a low "on" resistance, delivering more power than other similar components. Additionally, it features integrated dynamic drain and source resistance control which reduces power losses and improves power efficiency. This makes it a suitable choice for applications such as dc-dc converters, motor control, automotive headlights and low-voltage contactors.
The FDMC86259P also offers high frequency switching capability and reduced power consumption due to its low capacitance. This makes it well-suited for power management applications, allowing for a smoother, more energy-efficient operation. Moreover, the device is designed to operate over a wide range of temperatures, making it suitable for a range of industrial and consumer applications.
In conclusion, the FDMC86259P is an ideal component for power management applications due to its wide range of features, including integrated dynamic drain and source resistance control, low capacitance and low "on" resistance. Its ability to switch at high frequencies with reduced power consumption make it suitable for a variety of applications, such as dc-dc converters, motor control, automotive headlights and low-voltage contactors. Additionally, its low gate threshold allows for improved system efficiency and higher power density. Overall, the FDMC86259P is an excellent choice for power management applications.
The specific data is subject to PDF, and the above content is for reference
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FDMC86259P Datasheet/PDF