FDMC86259P Allicdata Electronics
Allicdata Part #:

FDMC86259PTR-ND

Manufacturer Part#:

FDMC86259P

Price: $ 0.61
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 150V 13A POWER33
More Detail: P-Channel 150V 3.2A (Ta), 13A (Tc) 2.3W (Ta), 62W ...
DataSheet: FDMC86259P datasheetFDMC86259P Datasheet/PDF
Quantity: 1000
1 +: $ 0.60800
10 +: $ 0.58976
100 +: $ 0.57760
1000 +: $ 0.56544
10000 +: $ 0.54720
Stock 1000Can Ship Immediately
$ 0.61
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 8-PowerWDFN
Supplier Device Package: Power33
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.3W (Ta), 62W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2045pF @ 75V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 107 mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 13A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDMC86259P is a depletion-mode a P-Channel Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET) device, sometimes known as an insulated-gate FET (IGFET), which forms the basis of modern electronics. This component offers a variety of features, including integrated dynamic drain and source resistance control, high frequency switching with low on-resistance, and reduced power consumption. It is suitable for a range of industrial and consumer applications, such as power management, dc-dc converters, motor control, automotive headlights, low-voltage contactors and other lighting systems.

The FDMC86259P works by using gate, source and drain terminals to control a current flow between the source and the drain. The size of the current and the "on" resistance can be determined by the voltage applied across the gate. This voltage is known as the "gate voltage". When the gate voltage is below a certain threshold, a depletion region is created, which prevents current to flow through the die. This is known as the "off state". When the gate voltage is increased, electrons are attracted to the gate and form a conducting region, allowing current to flow between the source and the drain. This is known as the "on state".

The FDMC86259P is an ideal component for power management applications. It operates with a low "on" resistance, delivering more power than other similar components. Additionally, it features integrated dynamic drain and source resistance control which reduces power losses and improves power efficiency. This makes it a suitable choice for applications such as dc-dc converters, motor control, automotive headlights and low-voltage contactors.

The FDMC86259P also offers high frequency switching capability and reduced power consumption due to its low capacitance. This makes it well-suited for power management applications, allowing for a smoother, more energy-efficient operation. Moreover, the device is designed to operate over a wide range of temperatures, making it suitable for a range of industrial and consumer applications.

In conclusion, the FDMC86259P is an ideal component for power management applications due to its wide range of features, including integrated dynamic drain and source resistance control, low capacitance and low "on" resistance. Its ability to switch at high frequencies with reduced power consumption make it suitable for a variety of applications, such as dc-dc converters, motor control, automotive headlights and low-voltage contactors. Additionally, its low gate threshold allows for improved system efficiency and higher power density. Overall, the FDMC86259P is an excellent choice for power management applications.

The specific data is subject to PDF, and the above content is for reference

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