| Allicdata Part #: | FDMC610PTR-ND |
| Manufacturer Part#: |
FDMC610P |
| Price: | $ 0.51 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET P-CH 12V 80A POWER33 |
| More Detail: | P-Channel 12V 80A (Tc) 2.4W (Ta), 48W (Tc) Surface... |
| DataSheet: | FDMC610P Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.51200 |
| 10 +: | $ 0.49664 |
| 100 +: | $ 0.48640 |
| 1000 +: | $ 0.47616 |
| 10000 +: | $ 0.46080 |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | Power33 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.4W (Ta), 48W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1250pF @ 6V |
| Vgs (Max): | ±8V |
| Gate Charge (Qg) (Max) @ Vgs: | 99nC @ 4.5V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 3.9 mOhm @ 22A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
| Drain to Source Voltage (Vdss): | 12V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The FDMC610P is a popular member of STMicroelectronics\' FET family of transistors. It is a single-N-channel enhancement mode Field-Effect Transistor (FET) that can be used in virtually any application which requires bidirectional or power switching. The FDMC610P offers maximum load current ratings up to 300mA with drain-source voltages up to 23V, and offers an average on-resistance of 100mΩ. It is a dual gate N-channel MOSFET, with a low gate threshold voltage, low RDS(on) and low gate charge, making it suitable for use in a wide range of applications.
The FDMC610P\'s gate-source voltage rating of 10V makes it suitable for use in many low voltage circuits. Its RDS(on) of 100mΩ allows high efficiency switching while its low gate charge (Qg) of 4.9nC makes it suitable for use in high speed switching applications.
The FDMC610P can be used in a variety of applications, such as in power switching, DC-DC converters, motor drives, power amplifiers, power supplies, and audio amplifiers. It is used in power MOSFET gates, as an alternative to other FETs such as BJTs (Bipolar Junction Transistors). Its RDS(on), low capacitance and reduce source-drain capacitance make it a suitable choice for certain power supply applications.
The FDMC610P\'s working principle is based on the same principle as that of a MOSFET. The drain is connected to a voltage source, the source is connected to the ground, and the gate is connected to the appropriate control voltage via an external bias network. When the gate voltage is increased beyond the threshold voltage, the transistor\'s behavior changes from off to on. The gate voltage is used to adjust the drain-source resistance, thus controlling the current flowing from drain to source.
The FDMC610P also features built-in thermal protection and limited power dissipation. It also features an ultra-low peak capacitance for improved performance. It is also designed for minimal leakage current, making it suitable for use in low power applications. It is also designed to operate stably in low temperature environments, making it ideal for use in industrial applications.
The FDMC610P is a very useful tool in the world of electronics, and in many applications it has replaced the BJT. Its performance far outstrips the BJT in terms of switching speed and power efficiency, making it an ideal choice for a variety of power switching applications.
The specific data is subject to PDF, and the above content is for reference
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FDMC610P Datasheet/PDF