| Allicdata Part #: | FDMC7572STR-ND |
| Manufacturer Part#: |
FDMC7572S |
| Price: | $ 0.83 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 25V 40A POWER33 |
| More Detail: | N-Channel 25V 22.5A (Ta), 40A (Tc) 2.3W (Ta), 52W ... |
| DataSheet: | FDMC7572S Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.83000 |
| 10 +: | $ 0.80510 |
| 100 +: | $ 0.78850 |
| 1000 +: | $ 0.77190 |
| 10000 +: | $ 0.74700 |
Specifications
| Vgs(th) (Max) @ Id: | 3V @ 1mA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | Power33 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.3W (Ta), 52W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2705pF @ 13V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 10V |
| Series: | PowerTrench®, SyncFET™ |
| Rds On (Max) @ Id, Vgs: | 3.15 mOhm @ 22.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 22.5A (Ta), 40A (Tc) |
| Drain to Source Voltage (Vdss): | 25V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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FDMC7572S is a high-speed MOSFET transistor that provides superior performance for a variety of applications including switching and processing. This device is built with a specific structure that allows it to handle high-power signals with a minimum amount of power loss and also to provide high-speed switching.In order to understand FDMC7572S working principle, it is important to discuss the structure of this device. FDMC7572S consists of two vertical columns, each column containing four interconnected layers. The first layer is a base electrode, which is the gate, and the second and third layers are source and drain electrodes. These three layers form a channel which is the primary components of FDMC7572S.FDMC7572S\'s unique structure allows it to control the flow of current from the gate to the source and drain electrodes based on the applied voltage. When the voltage between the gate and the source is more positive than the drain, current flows in the direction from the gate to the source. This is known as the forward-mode of operation, which is the fundamental principle of operation for any MOSFET transistor.In contrast to the forward-mode, the reverse-mode of operation occurs when the voltage between the gate and the drain is more positive than the source. In this case, current flows in the opposite direction from the drain to the gate. This is known as the reverse-mode of operation and it is used to switch off or reduce the current flow through the device. This is a very useful feature of FDMC7572S, allowing designers to implement complex designs with minimal effort.FDMC7572S application field is mainly in industrial and automotive control because it can switch high current efficiently and accurately. It is also used for power electronics, mobile radio equipment, and high-speed computer interfaces. In high-voltage applications like motor control, FDMC7572S provides a very high switching speed that allows high-power signals to be handled with minimal power loss. This makes it ideal for applications that require precise switching.Finally, FDMC7572S can be used in a variety of situations where high power and speed requirements need to be met but with minimal power loss. With its unique structure, FDMC7572S is a great new technology that can be used in a wide range of applications that could not be addressed before. It is an ideal solution for applications where power loss is of great importance and speed is of the essence.The specific data is subject to PDF, and the above content is for reference
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FDMC7572S Datasheet/PDF