FDMC510P Allicdata Electronics
Allicdata Part #:

FDMC510PTR-ND

Manufacturer Part#:

FDMC510P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 20V 18A 8-MLP
More Detail: P-Channel 20V 12A (Ta), 18A (Tc) 2.3W (Ta), 41W (T...
DataSheet: FDMC510P datasheetFDMC510P Datasheet/PDF
Quantity: 54000
Stock 54000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-MLP (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7860pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 116nC @ 4.5V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 8 mOhm @ 12A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 18A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDMC510P is an embedded field effect transistor (FET) that is widely used in different devices and applications. It is a single-gate FET, meaning it has only one controlling gate, and is a type of metal-oxide-semiconductor field-effect transistor (MOSFET). As such, it behaves similarly to a normal FET, but with some key differences.

The FDMC510P is a laterally diffused metal-oxide semiconductor (LDMOS) device that is formed by depositing a thin high-K dielectric layer between the gate and the channel of the transistor. This layer, along with the use of silicon nitride as the gate insulator, enables the use of a higher gate voltage than a traditional FET. This helps to increase the performance of the FDMC510P and make it suitable for higher power applications.

The FDMC510P is widely used in a variety of applications, such as power amplifiers, radio frequency (RF) amplifiers, high-speed switching, battery management and power supplies. For example, it is widely used in RF power amplifiers because it can handle high current and high power, enabling higher output power and efficiency. It is also widely used in power supplies for its high-speed switching capabilities and its excellent thermal properties.

The FDMC510P is capable of handling up to 5 GHz in frequency, making it a popular choice for high-speed switching applications and high-frequency communications. Its thermal characteristics, including low thermal resistance and low thermal transfer, make it ideal for high-power and high-current applications where heat dissipation is an issue.

The working principle of the FDMC510P, like any other FET, uses a voltage applied to the gate to control the flow of electrons through the channel, thus allowing current to flow. The controlling gate acts as a valve, deciding when and how much current should be allowed to flow when an input voltage is applied. This makes the FDMC510P an excellent choice for controlling the flow of power in high load applications.

In addition to its excellent performance, the FDMC510P is also very efficient in terms of power consumption. Due to its low operating current and low threshold drain-source voltage, it is capable of operating at low power while still providing excellent performance. This makes it an ideal choice for battery management applications, where low power consumption is key.

The FDMC510P is a very versatile and reliable device that is used in a wide variety of applications. Its high power handling capabilities and excellent thermal properties make it a popular choice for high-power and high-frequency applications. Its low operating current and low threshold drain-source voltage make it an excellent choice for battery management applications. And its ability to handle high frequencies makes it an ideal choice for high-speed switching and communications applications.

The specific data is subject to PDF, and the above content is for reference

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