| Allicdata Part #: | FDMC2610TR-ND |
| Manufacturer Part#: |
FDMC2610 |
| Price: | $ 0.44 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 200V 2.2A POWER33-8 |
| More Detail: | N-Channel 200V 2.2A (Ta), 9.5A (Tc) 2.1W (Ta), 42W... |
| DataSheet: | FDMC2610 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.44000 |
| 10 +: | $ 0.42680 |
| 100 +: | $ 0.41800 |
| 1000 +: | $ 0.40920 |
| 10000 +: | $ 0.39600 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | 8-PowerWDFN |
| Supplier Device Package: | 8-MLP (3.3x3.3) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.1W (Ta), 42W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 960pF @ 100V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
| Series: | UniFET™ |
| Rds On (Max) @ Id, Vgs: | 200 mOhm @ 2.2A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 2.2A (Ta), 9.5A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FETs and MOSFETs are integrated circuits that are used in many applications involving electronic circuits. The FDMC2610 is a type of single-gate FET (field effect transistor) that is used in various types of circuit applications where load switching and frequency control is required. It is commonly used in industrial and consumer electronics, telecommunications and automation equipment.
FDMC2610 Features
The FDMC2610 is a single-gate FET with a maximum collector-to-emitter voltage (VCE) of 600V and a maximum power dissipation (TJ) of 150W. It has a drain current (ID) rating of 5A, a gate-source voltage (VGS) rating of ±18V, and an operating temperature range of -55°C to +175°C. It also features an on-state dynamic resistance (RDS(on)) of 0.04Ω and an on-state voltage drop (VDS(on)) of 15V. The FET has a breakdown voltage (VBR) of 600V and a ruggedness rating of 5. The FET is UL Recognized, RoHS Compliant, and is Halogen Free.
FDMC2610 Working Principle
The FDMC2610 is a type of insulated-gate field effect transistor (FET) that utilizes the conduction principle of majority carrier injection. The conduction principle works by injecting a majority of electrons through an insulated gate region, which then further pass through a very thin inversion layer formed at the interface of the source and drain electrodes. This allows electrons to flow through the source to drain steadily and thus facilitating low on-state losses and low switching losses. The FET also works by controlling the flow of electrons through the gate region by introducing an external voltage, thus allowing the user to control the electron flow through the source and drain electrodes.
FDMC2610 Application Field
The FDMC2610 is commonly used for load switching and frequency control applications. Its high switching frequency and low on-state losses make it suitable for use in industrial and consumer electronics, telecommunications and automation equipment. By controlling the electron flow through the gate region, the FET can be used for power switches, motor drivers and as an amplifier or frequency controller for AC and DC motors, making it useful for applications such as HVAC systems, LED lighting, and motion control systems.
The FDMC2610 is also used as a switching element in power supplies and converters, such as AC/DC, DC/DC, and AC/AC converters. It can also be used as a low frequency ON/OFF switch as well as a linear regulator, making it suitable for use in many power management applications.
Conclusion
The FDMC2610 is a single-gate FET that is used in many applications involving electronic circuits. It has a drain current and gate-source voltage rating of 5A and ±18V, respectively, and an operating temperature range of -55°C to +175°C. It utilizes the conduction principle of majority carrier injection and is commonly used for load switching and frequency control applications in industrial and consumer electronics, telecommunications and automation equipment. This FET can also be used as an amplifier or frequency controller for AC and DC motors, power switches, motor drivers, and power supplies and converters.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| FDMC8878_F126 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 30V PWR33N-Ch... |
| FDMC013P030Z | ON Semicondu... | -- | 1000 | MOSFET P-CHANNEL 30V 54A ... |
| FDMC610P | ON Semicondu... | -- | 1000 | MOSFET P-CH 12V 80A POWER... |
| FDMC86160 | ON Semicondu... | -- | 1000 | MOSFET N CH 100V 9A POWER... |
| FDMC86320 | ON Semicondu... | -- | 1000 | MOSFET N CH 80V 10.7A 8-M... |
| FDMC86520DC | ON Semicondu... | -- | 1000 | MOSFET N CH 60V 17A POWER... |
| FDMC6683PZ | ON Semicondu... | -- | 1000 | IC POWER MANAGEMENTP-Chan... |
| FDMC7672_F125 | ON Semicondu... | 0.0 $ | 1000 | IC POWER MANAGEMENTN-Chan... |
| FDMC010N08C | ON Semicondu... | -- | 1000 | PTNG 80/20V IN 3X3CLIPN-C... |
| FDMC6675BZ | ON Semicondu... | -- | 1000 | MOSFET P-CH 30V 9.5A POWE... |
| FDMC2610 | ON Semicondu... | -- | 1000 | MOSFET N-CH 200V 2.2A POW... |
| FDMC2D8N025S | ON Semicondu... | 0.47 $ | 1000 | MOSFET N-CH 25V 124A 8PQF... |
| FDMC86183 | ON Semicondu... | 0.49 $ | 1000 | MOSFET N-CH 100V 47A 8PQF... |
| FDMC3612 | ON Semicondu... | -- | 3000 | MOSFET N-CH 100V 8-MLPN-C... |
| FDMC86160ET100 | ON Semicondu... | -- | 1000 | MOSFET N-CH 100V 9A POWER... |
| FDMC8884-F126 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 30V PWR33N-Ch... |
| FDMC8030 | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 40V 12A 8MLP... |
| FDMC8360LET40 | ON Semicondu... | 0.57 $ | 3000 | PT8 N-CH 40/20V POWER TRE... |
| FDMC007N08LCDC | ON Semicondu... | -- | 1000 | FET 80V 7.0 MOHM PQFN33N-... |
| FDMC7672 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 8-MLPN-Ch... |
| FDMC0208 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH |
| FDMC8854 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 15A POWER... |
| FDMC7660DC | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 40A POWER... |
| FDMC7200S | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 30V 7A/13A P... |
| FDMC3300NZA | ON Semicondu... | 0.0 $ | 1000 | MOSFET 2N-CH 20V 8A POWER... |
| FDMC8200S_F106 | ON Semicondu... | 0.0 $ | 1000 | MOSFET 2N-CH 30V 6A/8.5A ... |
| FDMC5614P | ON Semicondu... | -- | 1000 | MOSFET P-CH 60V 5.7A POWE... |
| FDMC86324 | ON Semicondu... | -- | 3000 | MOSFET N-CH 80V 20A POWER... |
| FDMC7208S | ON Semicondu... | -- | 3000 | MOSFET 2N-CH 30V 12A/16A ... |
| FDMC6688P | ON Semicondu... | -- | 1000 | MOSFET P-CH 20V POWER33P-... |
| FDMC8015L | ON Semicondu... | -- | 1000 | MOSFET N-CH 40V 7A 8MLPN-... |
| FDMC86340ET80 | ON Semicondu... | 0.78 $ | 1000 | MOSFET N-CH 80V 48A POWER... |
| FDMC86116LZ | ON Semicondu... | -- | 1000 | MOSFET N-CH 100V 3.3A 8-M... |
| FDMC86261P | ON Semicondu... | -- | 9 | MOSFET P-CH 150V 2.7A 8ML... |
| FDMC7692S-F126 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 30VN-Channel ... |
| FDMC8554 | ON Semicondu... | -- | 3000 | MOSFET N-CH 20V 16.5A POW... |
| FDMC8032L | ON Semicondu... | 0.28 $ | 1000 | MOSFET 2N-CH 40V 7A 8-MLP... |
| FDMC8327L | ON Semicondu... | -- | 1000 | MOSFET N-CH 40V 12A 8MLPN... |
| FDMC86102 | ON Semicondu... | -- | 1000 | MOSFET N-CH 100V 8-MLPN-C... |
| FDMC8296 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 12A POWER... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...
FDMC2610 Datasheet/PDF