FDMC7672S-F126 Discrete Semiconductor Products |
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Allicdata Part #: | FDMC7672S-F126TR-ND |
Manufacturer Part#: |
FDMC7672S-F126 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V |
More Detail: | N-Channel 30V 14.8A (Ta) 2.3W (Ta), 36W (Tc) Surfa... |
DataSheet: | FDMC7672S-F126 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-MLP (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.3W (Ta), 36W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2520pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 10V |
Series: | PowerTrench®, SyncFET™ |
Rds On (Max) @ Id, Vgs: | 6 mOhm @ 14.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 14.8A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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FDMC7672S-F126 Application Field and Working Principle
The FDMC7672S-F126 is a metal-oxide-semiconductor field-effect transistor (MOSFET), which is used to control high-power electrical loads. It is a single-mode MOSFET and is commonly used to provide both high-voltage isolation and switching capability in applications such as motor control, lighting systems, power supplies, and power conversion. It is capable of carrying currents up to 800 amperes and can handle peak voltages of up to 60 volts.
MOSFETs are three-terminal semiconductor devices that can be used as an electronic switch or amplifier in an array of different applications. MOSFETs are classified into two primary types, Enhancement-mode (E-MOSFET), and Depletive-mode (D-MOSFET). The FDMC7672S-F126 is an enhancement-mode MOSFET, which is also referred to as an enhancement-type MOSFET, or an E-MOSFET.
The FDMC7672S-F126 consists of four layers of semiconductor material, the first two layers being drain (p-type) and source (n-type) regions, and the bottom two layers being the gate (metal) and gate oxide. The gate oxide acts as an insulator between the gate and channel of the device. The main function of the gate is to control the current flow into the device, which can be done by controlling the voltage applied to it. The FDMC7672S-F126 is a normally-on type of device, which means that it is always in the “on” state when there is no voltage across the gate and drain. When a voltage is applied to the gate, the device will become “off”, since current will not be able to flow into the device. By varying the voltage applied to the gate, the device can be used as a switch to control the current flow between two different voltages.
The FDMC7672S-F126 is also a current-driven device, which means that it requires a certain amount of current to be applied to the gate in order to activate the transistor. This means that the device can operate in either linear or switching mode, depending on the amount of current applied. Because this device uses a depletion mode rather than an enhancement mode, it is often used in high-frequency switching applications.
In linear applications, such as motor control, the FDMC7672S-F126 can be used to regulate current and voltage. By controlling the voltage applied to it, the device can be used to modulate the current and voltage of a system, providing a more stable output. In switching applications, such as power conversion, the FDMC7672S-F126 can be used to switch rapidly between two different voltage levels. This can be used to efficiently transfer power from one voltage level to another.
The FDMC7672S-F126 is an extremely versatile device, and can be used in a variety of different applications. Its robust construction makes it suitable for a wide range of high-voltage, current, and switching requirements. With its useful features and a wide variety of applications, the FDMC7672S-F126 is one of the most popular MOSFETs on the market today.
The specific data is subject to PDF, and the above content is for reference
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