FDMC7692S

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FDMC7692S Application Field and Working Principle

The FDMC7692S is a type of Field Effect Transistor (FET) more precisely a single N-Channel enhancement mode lateral MOSFET. It belongs to the family of discrete semiconductor devices where operation is based on the movement of electric charge carriers By controlling the number of carriers, FETs can be used to amplify or switch electrical signals.

Specifically designed for power applications, such as DC/DC converters, synchronous rectification circuits and motor controls, the FDMC7692S is part of the FDMC Family of N-channel MOSFET handled by STMicroelectronics. These types of transistors are used in a vast range of applications, from portable electronic devices to home appliances, automotive, telecom and industrial sectors.

Characterized by a high-speed switching performance and unmatched levels of robustness, the FDMC7692S is built with the STripFET VII MOSFET technology, a superior power and performance process that enhances the standard strip layout and offers superior switching speed, low drain-source on-resistance and low gate charge. The device design features a low-inductance versatile layout and an integrated anti-parallel Power Schottky diode. The FDMC7692S also makes use of an advanced packaging technology, the PowerMESH™ technology, allowing it to deliver minimised parasitic inductances, enabling designers to minimise switching losses and optimize overall performance, power density and system efficiency.

Working Principle

Field Effect Transistors, including the so-called MOSFET, operate through the use of a gate in order to control the flow of a current from the drain to the source. When a positive electric charge is applied to the gate a depletion zone forms in the channel between the gate and the drain. If a positive voltage is subsequently maintained at the gate, a conductive channel is formed inside the transistor having a resistance proportional to the voltage applied to the gate. This allows the flow of electrons (current) between the source and the drain. When the electric charge is removed, the current stops flowing and thus the transistor is switched off. In essence, the magnitude of the voltage applied to the gate controls the intensity of the current flowing from the drain to the source.

The FDMC7692S offers the additional advantage that its threshold voltage is not affected by temperature. This constant threshold ensures that the device remains stable whilst switching on and off, thus exceeding the requirements for devices that are being used for critical electronic applications.

Conclusion

The FDMC7692S is an advanced Field Effect Transistor specifically designed to perform in a number of high power applications. Utilizing STMicroelectronics’ STripFET VII process and the patented PowerMESH™ technology, the device features exceptional switching performance, low drain-source on-resistance and low gate charge. Furthermore, it offers an additional benefit, namely that the threshold voltage is not affected by temperature and remains stable at all times.

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