FDMC8298 Allicdata Electronics
Allicdata Part #:

FDMC8298-ND

Manufacturer Part#:

FDMC8298

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2N-CH 8MLP
More Detail: Mosfet Array Surface Mount Die
DataSheet: FDMC8298 datasheetFDMC8298 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
FET Type: --
FET Feature: --
Drain to Source Voltage (Vdss): --
Current - Continuous Drain (Id) @ 25°C: --
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
Gate Charge (Qg) (Max) @ Vgs: --
Input Capacitance (Ciss) (Max) @ Vds: --
Power - Max: --
Operating Temperature: --
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FDMC8298 is an array of high-voltage, fully-depleted, monolithic vertical trench MOSFETs designed for use in mobile and industrial applications. They are used to control voltage and current in electronic circuits. The FDMC8298 is a highly efficient, low-cost device that can be used in many different applications.

The FDMC8298 is an array of 8 transistors, each capable of delivering up to 4.5A of current. The array features a low on-resistance of 20Ω, a maximum voltage rating of 20V, and a maximum temperature rating of 150°C. The FETs in the array are of the trench MOSFET type, meaning they are fully depleted when off, and completely filled (on) when conducting. This high-efficient, low-cost device can be used in many different applications including power management, audio amplifiers, motor control, lighting control, and a variety of industrial applications.

The FDMC8298 works by providing a voltage-controlled path for current to flow between two pins. When the gate voltage is applied, a positive charge is induced on the gate region, allowing the source-drain current to flow through the MOSFET. The gate voltage, along with the source-drain voltage, control the magnitude of the source-drain current in the device. The gate voltage is also used to determine the resistive nature, or how much resistance the transistor offers to the current flow between source and drain.

The FDMC8298 is capable of providing high levels of current and low resistance, which makes it a very efficient and beneficial transistor array. It is an ideal device for many different applications such as motor and lighting control, power management, audio amplification, and a variety of industrial applications. The device is also capable of operating over an extended temperature range. This makes it a suitable choice for high-temperature industrial applications, and also ensures reliable operation in extreme climates.

The FDMC8298 is a highly versatile array of MOSFETs capable of providing up to 4.5A of current with low on-resistance and high temperature ratings. Its use in many different applications including power management, motor control, lighting control, and a variety of industrial applications makes it highly sought-after. Its efficient current delivery and low-cost make the FDMC8298 an ideal choice for many different applications.

The specific data is subject to PDF, and the above content is for reference

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