FDMC6675BZ Allicdata Electronics
Allicdata Part #:

FDMC6675BZTR-ND

Manufacturer Part#:

FDMC6675BZ

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 30V 9.5A POWER33
More Detail: P-Channel 30V 9.5A (Ta), 20A (Tc) 2.3W (Ta), 36W (...
DataSheet: FDMC6675BZ datasheetFDMC6675BZ Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-MLP (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.3W (Ta), 36W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2865pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 14.4 mOhm @ 9.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 20A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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FDMC6675BZ is one of the most popular Field Effect Transistors (FET), a type of semiconductor component belonging to the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). It has a single gate structure, making it suitable for applications requiring direct current and low power consumption. Its main features are the low on-state resistance, fast switching times and ruggedness.

The FDMC6675BZ is often deployed in a range of applications, such as power conversion applications, high-current switcher and DC motor control. The device can tolerate over-voltage and over-current conditions, making it suitable for harsh applications. In addition, it provides fast turn-on and high breakdown voltage in comparison to regular MOSFETs.

The working principle of the FDMC6675BZ is relatively simple. It essentially acts as a switch, using an applied voltage to turn the current on and off. When a voltage is applied to the gate, an electric field is created in the channel between the source and drain. This electric field repels the holes at the drain end and attracts electrons at the source end, resulting in an accumulation of carriers in the insulating layer, referred to as the ‘channel’. This accumulation creates a low resistance path between the source and the drain, allowing the current to flow.

The FDMC6675BZ can be operated in either the ‘Depletion’ or ‘Enhancement’ mode. In the ‘Depletion’ mode, the voltage applied to the gate creates an electric field which increases the resistance between the source and the drain. This effectively ‘depletes’ the charge in the device, resulting in a higher resistance between source and the drain. In comparison, the ‘Enhancement’ mode creates an electric field which decreases the resistance between the source and the drain. This effectively ‘enhances’ thecharge in the device, resulting in a lower resistance between source and the drain.

Finally, the FDMC6675BZ can also operate in the ‘Switch-off’ mode, where no voltage is applied to the gate. Under this condition the device acts like an open switch, with the resistance between source and the drain remaining high.

In summary, the FDMC6675BZ is a widely used MOSFET with various application fields such as power conversion applications and DC motor control. It has a single gate structure and operates in a variety of modes – ‘Depletion’, ‘Enhancement’ or ‘Switch-off’ – enabling it to be used in different situations.

The specific data is subject to PDF, and the above content is for reference

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