| Allicdata Part #: | FDMC7672TR-ND |
| Manufacturer Part#: |
FDMC7672 |
| Price: | $ 0.27 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 30V 8-MLP |
| More Detail: | N-Channel 30V 16.9A (Ta), 20A (Tc) 2.3W (Ta), 33W ... |
| DataSheet: | FDMC7672 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.27200 |
| 10 +: | $ 0.26384 |
| 100 +: | $ 0.25840 |
| 1000 +: | $ 0.25296 |
| 10000 +: | $ 0.24480 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | 8-PowerWDFN |
| Supplier Device Package: | 8-MLP (3.3x3.3) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.3W (Ta), 33W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3890pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 57nC @ 10V |
| Series: | PowerTrench®, SyncFET™ |
| Rds On (Max) @ Id, Vgs: | 5.7 mOhm @ 16.9A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 16.9A (Ta), 20A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The FDMC7672 is a single gate insulated gate field effect transistor (IGFET). It is part of an extensive family of small signal transistors for theVishay Siliconix product line. As a part of their silicon–gate CMOS (complementary MOS) product family, the FDMC7672 utilizes a process that combines an N-type MOS and a P-type MOS onto a single chip. This family of products has features that make them a desirable choice for circuits and applications that require high performance with low cost.
The FDMC7672 operates in a range of signal, moderate, and heavy-duty applications. Applications using it may require the device to be powered by a voltage source equal to or greater than 4V up to the maximum voltage, which is usually 40V or greater. This device can be used in digital and analog circuits, in power control applications, as a low-noise amplifier, in switching circuits, and in audio and video circuits.
The FDMC7672 is an eight-gate design, which offers more functional operation than its predecessor, the four-gate design. This difference in design allows for operation as an analog switch and digital switch in the same circuit. This increases the range of applications the device is suitable for.
The FDMC7672 offers both unifunctional and monofunctional operation, which allows for greater flexibility in applications and reduces power consumption. By using a dual-gate configuration, it is possible to have a single transistor that can be used for both switching and amplification, reducing the number of transistors needed for a given application.
The FDMC7672 also offers other features such as adjustable turn-on/turn-off thresholds and low gate charge, both of which can increase efficiency in the circuit. In addition, it offers low capacitances at the gate and source/drain to maximize conduction in both directions of the transistor.
The working principle of the FDMC7672 is simple. By applying a voltage to the gate, it allows electrons to pass through the channel between the source and drain regions, resulting in conduction. The magnitude of the voltage applied to the gate determines the amount of conduction that occurs. This allows the device to be used as either a switch or an amplifier.
The FDMC7672 can be used in many applications, from basic digital circuits to switching and audio/video applications. Its features, such as its dual-gate operation, adjustable turn-on/turn-off thresholds, and low gate charge make it a desirable device for a variety of applications. It is an invaluable component for a wide range of modern product designs.
The specific data is subject to PDF, and the above content is for reference
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FDMC7672 Datasheet/PDF