| Allicdata Part #: | FDMC86324TR-ND |
| Manufacturer Part#: |
FDMC86324 |
| Price: | $ 0.40 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 80V 20A POWER33 |
| More Detail: | N-Channel 80V 7A (Ta), 20A (Tc) 2.3W (Ta), 41W (Tc... |
| DataSheet: | FDMC86324 Datasheet/PDF |
| Quantity: | 3000 |
| 1 +: | $ 0.40000 |
| 10 +: | $ 0.38800 |
| 100 +: | $ 0.38000 |
| 1000 +: | $ 0.37200 |
| 10000 +: | $ 0.36000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | Power33 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.3W (Ta), 41W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 965pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 23 mOhm @ 7A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 7A (Ta), 20A (Tc) |
| Drain to Source Voltage (Vdss): | 80V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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FDMC86324 is a high-performance n-channel enhancement mode power transistors of field effect. This device is a kind of MOSFET (metal oxide semiconductor field effect transistors) that uses the conducting columns of a metal oxide semiconductor as the control inputs. It is a kind of silicon based transistor that is used in a variety of applications, such as power management, switching, signal processing and more.
The FDMC86324 consists of a source, a drain and a gate. The source and drain terminals are connected to the semiconductor device in which electrical carriers are at the PN junction interface between the two layers. The gate is connected to a control terminal and is responsible for controlling the flow of current between the source and the drain.
The application field of FDMC86324 is mainly in power management. It is mainly used in ultra-low voltage power devices, such as digital products and notebook computers, and the power switch of embedded systems. It is also suitable for portable electronic products with low power consumption and strong anti-interference.
The working principle of the FDMC86324 is based on the charge-carrier inversion principle. When a voltage is applied between the source and the drain, the electron flow along the channel is blocked by the voltage between the source and drain. However, when the voltage between the gate and the source is increased, the electric field increases and the electrons are pushed away from the gate and pull into the channel, allowing electrons or holes to flow from the source to the drain.
The FDMC86324 has two characteristic characteristics, namely transconductance and drain-source on resistance. Transconductance is defined as the ratio of the change in current flowing through the channel to the channel to the change in gate voltage, and is related to the channel width and channel length. The drain-source on-resistance (Rds-on) is the maximum resistance value of the drain-source voltage when the device is in an on state. The larger its value, the smaller the current passing through the device, and it can effectively avoid the thermal runaway of power devices.
In general, FDMC86324 is an important component used in power management and switching applications, and it can effectively reduce power consumption. Its excellent performance has brought many advantages including low cost, reliable performance, small size and low leakage. Therefore, it is suitable for a wide range of applications, such as automotive electronics, portable electronic products and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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FDMC86324 Datasheet/PDF