FDMC8878_F126 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	8-PowerWDFN
Supplier Device Package:	8-MLP (3.3x3.3)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.1W (Ta), 31W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1230pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	26nC @ 10V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	14 mOhm @ 9.6A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	9.6A (Ta), 16.5A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction to FDMC 8878_F126

The FDMC 8878_F126 is a single NMOS N-channel transistor designed to meet the most demanding requirements of the electronic industry. It has a low gate voltage threshold, high noise immunity and low on-state resistance. It is suitable for a variety of applications, including power management, battery management, low-noise amplifiers, and data switching.

Application Field

The FDMC 8878_F126 has a wide range of applications, but is best suited for low noise switching applications requiring low on-state resistance and high noise immunity. It can be used in battery management systems to monitor and control the current drawn from a battery. It can also be used in power management systems to control and regulate the power output of a power supply. Additionally, it can be used in low noise amplifiers to filter out any unwanted signals. Finally, the FDMC 8878_F126 can be used as a data switcher, allowing data signals to be sent and received at high speeds with minimal noise.

Working Principle

The FDMC 8878_F126 works on the principle of transistors and is made up of three components: the gate, the source, and the drain. The gate is responsible for controlling the flow of current through the transistor. When a voltage is applied to the gate, an electric field is created, which in turn controls the flow of current. The source and the drain serve as the two points at which current flows in and out of the transistor.The FDMC 8878_F126 operates as an N-channel MOSFET, meaning that the input voltage is applied to the gate, and the source is tied to the drain. A positive voltage at the gate will cause current to flow from the source to the drain, allowing for efficient switching. The FDMC 8878_F126 has a very low gate voltage threshold of -3.5 volts to -5 volt. This ensures that the transistor will respond quickly and reliably when a voltage is applied to the gate.The FDMC 8878_F126 also features a low on-state resistance, typically ranging from 0.03 Ohms to 0.2 Ohms. This means that minimal power is needed to maintain a specific current through the device. Low on-state resistance also results in a lower switching time, allowing for high-speed data transfer and switching.The FDMC 8878_F126 also offers high noise immunity due to its JFET-like gate structure. This means that the gate will not be sensitive to any external noise sources and ensures that the transistor will properly respond to the applied voltages and currents.Overall, the FDMC 8878_F126 is an ideal choice for low noise switching applications due to its low gate voltage threshold, low on-state resistance, and high noise immunity. Its range of applications make it a perfect choice for building reliable electronic devices.

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