FDMC86320 Allicdata Electronics
Allicdata Part #:

FDMC86320FSTR-ND

Manufacturer Part#:

FDMC86320

Price: $ 0.51
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N CH 80V 10.7A 8-MLP
More Detail: N-Channel 80V 10.7A (Ta), 22A (Tc) 2.3W (Ta), 40W ...
DataSheet: FDMC86320 datasheetFDMC86320 Datasheet/PDF
Quantity: 1000
1 +: $ 0.51200
10 +: $ 0.49664
100 +: $ 0.48640
1000 +: $ 0.47616
10000 +: $ 0.46080
Stock 1000Can Ship Immediately
$ 0.51
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-MLP (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2640pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 10.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 22A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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FDMC86320 Application Field and Working Principle

The FDMC86320 is a DesignGear FETMOS single field-effect transistor (FET) manufactured by Fairchild Semiconductor. It belongs to the DesignGear FETMOS single transistor family and is SMP (Surface Mount PCB) enabled. It is a high voltage N-Channel power MOSFET that can be operated at a maximum working voltage of 100V, a continuous drain current of 2A and a continuous Transistor-Self Drain Source Voltage of 7.5V along with other notable characteristics.

The main application of the FDMC86320 power MOSFET is as a discrete device for high VOL/VOH analog switches and motor control, where its low on-resistance along with low stand-off voltage, high-speed switching and fast body diode are especially useful features. It also works perfectly for system level power solutions, DC-DC converters, frequency converters, Li-Ion batteries and many other discrete amplifier and control circuits.

Working Principle

The FDMC86320 works on the principles of a field-effect transistor (FET). A FET is a type of electron device that consists of semiconductor material, usually with an oxide layer, in between two electrodes. A voltage between the two electrodes causes electrons to flow from one electrode to the other, creating a channel between the two. This channel is the path of electron flow and is what allows for current to flow through the FET.

In the FDMC86320, this phenomenon is used to control the current between the source and the drain. The source and drain electrodes are separated by an insulator (gate oxide layer), and a gate electrode is located in between. When a voltage is applied to the gate electrode, a voltage gradient between the source and the drain is created, resulting in the current flow between them. This current flow can be varied by adjusting the voltage applied to the gate.

Advantages

The FDMC86320 has several advantages over other types of power MOSFETs. It has a low resistance (on-resistance) when compared to other FETs, allowing it to pass more electricity with less power dissipation. It also has a low stand-off voltage and fast body diode, which make it an ideal choice for high voltage and/or fast switching applications. Additionally, the FDMC86320 is SMP enabled, meaning that it can be used for surface-mount Printed circuit board (PCB) designs.

Conclusion

The FDMC86320 is a high voltage N-Channel power MOSFET from Fairchild Semiconductor. It has a number of advantages over other FETs, including a low resistance, low stand-off voltage and fast body diode. It is mainly used for as a discrete device for high VOL/VOH analog switches, motor control, system level power solutions, DC-DC converters and frequency converters. The FDMC86320 is a SMP enabled, making it an ideal choice for rapid prototyping and surface-mount PCB designs.

The specific data is subject to PDF, and the above content is for reference

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