FDMC8854 Allicdata Electronics
Allicdata Part #:

FDMC8854TR-ND

Manufacturer Part#:

FDMC8854

Price: $ 0.31
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 15A POWER33
More Detail: N-Channel 30V 15A (Tc) 2W (Ta), 41W (Tc) Surface M...
DataSheet: FDMC8854 datasheetFDMC8854 Datasheet/PDF
Quantity: 1000
1 +: $ 0.31200
10 +: $ 0.30264
100 +: $ 0.29640
1000 +: $ 0.29016
10000 +: $ 0.28080
Stock 1000Can Ship Immediately
$ 0.31
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-MLP (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 41W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3405pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDMC8854 is a high-performance, high-speed, dual-channel, N-type MOSFET. It is mainly used in high speed, high voltage and high linearity applications, such as Wi-Fi, cellular base stations, RF switch, and other wireless applications. The FDMC8854 is capable of providing high speed switching, high power handling, and high reliability. In addition, it features low ESR, low noise, and low power consumption.

The FDMC8854 is constructed with two N-type MOSFETs, one N+ region and one P+ region, which are connected via two channels, each of which is connected to a metal gate. The FDMC8854 is compatible with most fabrication and packaging technologies, such as die-attach, flip-chip, and surface mount. This makes it an ideal choice for use in a variety of applications.

The working principle of the FDMC8854 is relatively simple. When the gate voltage reaches a certain threshold, called the threshold voltage, the N+ and P+ regions of the MOSFET are connected and the MOSFET is turned on. As gate voltage increases, the MOSFET will become more conductive, and more current will flow. This is the function of a MOSFET: to act as a switch.

The FDMC8854 is mainly used in a variety of high-performance, high-voltage, high-linearity applications, such as Wi-Fi and cellular base stations, RF switches, and other wireless applications. In addition, it can be used for high power switching, high-speed switching, low ESR, low self-noise and low power consumption. The FDMC8854 is also used in automotive, power electronics, and industrial applications. Furthermore, it is widely used in the manufacture of power amplifiers, power converters, and motor controllers.

In short, the FDMC8854 is a high-performance, high-speed, dual-channel MOSFET suitable for a wide range of applications. It features low ESR, low self-noise, and low power consumption, making it an ideal choice for high-performance, high-speed, and high-linearity applications. Furthermore, its compatibility with various fabrication and packaging technologies reduces the need for manual assembly and lowers the cost of manufacture. Consequently, the FDMC8854 is widely used in a variety of applications, ranging from consumer electronics to automotive, industrial, and telecommunications applications.

The specific data is subject to PDF, and the above content is for reference

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