FDMC8678S Discrete Semiconductor Products

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The FDMC8678S is a high-speed, high-voltage, 8-pin P-Channel MOSFET. It is a power integrated switching element for digital applications, offering excellent electromagnetic suppression characteristics on the drain of the FET. This FET is designed for controlling large input and output voltage swings in high-speed TTL digital circuits as well as RF circuits.

The FDMC8678S is also suitable for use in power management applications such as load switching and other control functions that require fast switching capabilities and ultra-low RDS(ON) curves. It has a maximum drain current of 60 mA and a maximum drain source voltage of 20V. It can operate up to 25V and is a low power and low profile device.

FDMC8678S Application Field

The FDMC8678S has excellent suppression characteristics, making it an ideal choice for a variety of applications. It is widely used in switching applications, including boost converters, step-up regulators, power switches and loop control systems. It can also be used to control high-speed data transmission and switching of TTL signals in digital systems.

It can be used as a high voltage distributed protection device in audio systems, providing both isolation and power switching capabilities. In addition, its low RDS(ON) and high reliability make it suitable for a variety of RF devices such as LNBs, transceivers and amplifiers.

The FDMC8678S is also widely used in automotive applications such as fuel injectors, throttle positions and suspension systems.

FDMC8678S Working Principle

The working principle of our FDMC8678S MOSFET switch is based on the flow of electrons from the source to the drain through an insulated gate device. When the control voltage applied to the gate is positive, the device is conducting, and when the control voltage is zero, the device is non-conducting. This means that with the appropriate control voltage, the switch can be used to control the current flow between the source and the drain.

The device is made up of two layers, a substrate and a gate oxide layer, which is insulated from the rest of the device by an oxide film. The oxide film acts as a gate to the device, allowing electrons to pass from the source to the drain when a positive control voltage is applied to the gate. When the gate voltage is zero, the device is non-conducting.

The device can be used as a switch in applications such as relays and transistors, where a control voltage can be used to switch the circuit state. The FDMC8678S is also widely used in logic circuits where it can be used to control logic signals. In addition, it can also be used in power management circuits to switch large currents between the source and the drain.

Our FDMC8678S MOSFETs offer the flexibility and robustness needed for many applications with good power handling capability in a small package. In addition, its low RDS(ON) characteristics make it suitable for digital and RF devices, providing excellent electromagnetic suppression.

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