Allicdata Part #: | IPD60R380C6INTR-ND |
Manufacturer Part#: |
IPD60R380C6 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 600V 10.6A TO252 |
More Detail: | N-Channel 600V 10.6A (Tc) 83W (Tc) Surface Mount P... |
DataSheet: | IPD60R380C6 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3.5V @ 320µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 700pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 3.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10.6A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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The IPD60R380C6 is a type of Power MOSFET that is designed to help regulate electricity usage in industrial applications. It is part of a larger family of power MOSFETS manufactured by Infineon Technologies. Like other Power MOSFETs, the IPD60R380C6 is a three-terminal electronic device that uses metal oxide semiconductor technology to control the flow of current from one transistor to another. It is primarily used in a variety of industrial applications, such as low-frequency switching, motor control, and power management.
As its name suggests, the IPD60R380C6 is a single-die Power MOSFET. The basic working principle of the IPD60R380C6 is the same as other Power MOSFETs. The four main terminals – drain, gate, source and substrate – are electrically connected to form a three-terminal device. The drain and source terminals are used to carry the operating current, while the gate terminal is used to provide control. When the gate voltage is increased, the current between the drain and source increases, enabling the device to operate as intended.
The IPD60R380C6 is designed for industrial applications that require high-power switching and motor control. It has a die size of 3.8mm x 1.0mm and a maximum drain-source voltage of 600V. The device can handle a maximum continuous drain current of 40A and a peak pulse current of 160A, making it suitable for high-power applications. It is also capable of switching frequencies up to 300 kHz, making it suitable for a variety of applications that require high-speed control.
In addition to its versatile operating characteristics, the IPD60R380C6 also offers low on-resistance, making it an ideal choice for high-efficiency applications. The low RDS(ON) of the device helps reduce power losses, leading to better efficiency and increased system performance. Furthermore, the device also features an integrated Schottky diode that provides secondary protection against electrostatic discharge, helping to ensure safety and reliability.
Overall, the Infineon Technologies IPD60R380C6 is an excellent power MOSFET for high-power applications. It is designed to handle high-power switching and motor control applications, and has a low on-resistance that helps reduce energy losses. Furthermore, the device also features an integrated Schottky diode for additional protection against electrostatic discharge. With its excellent performance and high reliability, it is an ideal choice for a variety of industrial applications.
The specific data is subject to PDF, and the above content is for reference
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