IPD60R180P7ATMA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPD60R180P7ATMA1 is an advanced type of field effect transistor (FET) known as a Metal Oxide Semiconductor FET (MOSFET). It is a relatively high-speed, high-power switching device, often used as a switch to control the flow of electrical current.

MOSFETs are two-terminal devices consisting of a source, a drain, and a gate electrode. When a voltage is applied to the gate, an electric field is created which attracts electrons to the gate-drain junction and repels electrons away from the gate-source junction. This action causes a shift in the FET’s threshold voltage, which influences the electrical current flowing through the device.

IPD60R180P7ATMA1 FETs are typically used in applications such as power conversion, power management, DC-to-DC converters, and load switching. They can be used to switch currents of up to 180A and at frequencies up to 20MHz and have a maximum input capacitance of 7500pF.

Unlike a bipolar transistor, a MOSFET does not require a gate current to operate. Instead, operation of the device is controlled by the amount of voltage applied to the gate. This is the major advantage of a MOSFET over a bipolar device, and is why they are so often used in high frequency applications. Furthermore, because they do not require a gate current, they have lower power dissipation and a smaller physical size than a bipolar device.

When an IPD60R180P7ATMA1 is used in a switching application, the gate voltage must be kept lesser than the source voltage to avoid breakdown of the insulation layers found in the MOSFET. When the voltage across the source and gate is relatively low, the IPD60R180P7ATMA1 will operate in its “linear” mode and the current flowing through the device will be proportional to the applied voltage.

When the voltage across the source and gate is relatively high, the IPD60R180P7ATMA1 will operate in its “saturation” mode and the current flow through the device will be limited by the load resistance and the impedance of the device. This mode of operation is usually used to protect circuits against excessive current.

IPD60R180P7ATMA1 FETs also offer superior noise immunity compared to other FETs, making them more suitable for use in high frequency applications. They can also be used to buffer input signals and reduce unintentional voltage deviations, resulting in improved signal quality.

In summary, the IPD60R180P7ATMA1 is a high power MOSFET device suitable for high frequency and high current applications. It is able to switch currents of up to 180A and has a maximum input capacitance of 7500pF. It offers superior noise immunity compared to other FETs and is well-suited for buffering input signals and reducing unintentional voltage deviations.

The specific data is subject to PDF, and the above content is for reference