IPD65R600C6ATMA1 Allicdata Electronics
Allicdata Part #:

IPD65R600C6ATMA1-ND

Manufacturer Part#:

IPD65R600C6ATMA1

Price: $ 0.49
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: LOW POWER_LEGACY
More Detail:
DataSheet: IPD65R600C6ATMA1 datasheetIPD65R600C6ATMA1 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.45025
Stock 1000Can Ship Immediately
$ 0.49
Specifications
Series: *
Part Status: Last Time Buy
Description

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The IPD65R600C6ATMA1 is a Power MOSFET transistor. As its name implies, it is a type of Field-Effect Transistor, or FET. FETs are most commonly found in a wide variety of applications where its unique properties are ideal for the job. The IPD65R600C6ATMA1 is a single n-channel MOSFET, which is a type of transistor that uses a thin layer of insulator (or dielectric) to control its current flow. This type of transistor is preferred in applications that require fast switching, high voltage, and low current.

The IPD65R600C6ATMA1 is primarily designed for use in DC/DC converters, motor control, and general power supply management. It can also be used in switching and signal conditioning circuits. The device’s fast switching speeds make it an optimal choice for high-speed circuits. Additionally, it can be used for LED lighting and solar power management applications due to its low on-state resistance and lower power dissipation.

The IPD65R600C6ATMA1 has a drain-source breakdown voltage of 600V, a maximum drain current of 6A, and a total gate charge of 20nC. It is available in a standard TO-220 package, as well as in through-hole and SMD varieties. This makes it easy to integrate into a variety of different types of designs. Additionally, the device can operate with an operating temperature range of -55°C to 175°C.

The working principle of the IPD65R600C6ATMA1 is fairly straightforward. When an electrical signal is applied to its control terminal (or “gate”), the conductivity between the drain and source terminals increases or decreases depending on the signal. This signal controls the flow of current between the drain and source terminals, allowing the device to be used as an amplifier or switch. Additionally, the device is protected against power surges and reverse bias.

In conclusion, the IPD65R600C6ATMA1 is a versatile Power MOSFET transistor that is ideal for use in a wide variety of switching and signal conditioning applications. Its fast switching speed and robust power management capabilities make it a great choice for many types of designs. With its wide temperature range and low on-state resistance, the IPD65R600C6ATMA1 is an ideal choice for DC/DC converters, motor control, LED lighting, and solar power management applications.

The specific data is subject to PDF, and the above content is for reference

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