IPD65R225C7ATMA1

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The IPD65R225C7ATMA1 is a type of FET (Field-Effect Transistor) specifically designed for high power applications. It is a high-voltage, low-on-resistance MOSFET (Metal-Oxide-Silicon Field-Effect Transistor). It has been designed to provide increased current handling capability with minimized power dissipation in a variety of different applications. Its operating temperature range is from -55°C to +175°C.

Applications

The IPD65R225C7ATMA1 is widely used in a wide range of applications including high-frequency power supply, industrial power supply, and power electronics. It can also be used in switching applications and high-voltage motor drive systems. It is particularly suitable for high-frequency switching and high-efficiency power conversion applications. These applications are typically found in system-level equipment such as datacom, telecom, computers, and server applications.

In addition to its applications in power electronics, the IPD65R225C7ATMA1 is also suitable for high current regulation and relay control. Its impressive resistance to current leakage when switched off makes it a good choice for applications which require precise current regulation. It can also be used for load switching and short-circuit control in high-current applications.

Working Principle

The IPD65R225C7ATMA1 is a MOSFET, which means it utilizes a metal-oxide-silicon structure to control current flow. The metal-oxide layer acts as a gate to control the flow of electrons between the source and the drain. The MOSFET structure allows the device to be switched on and off by simply changing the voltage applied to the gate.

One of the advantages of using a MOSFET is that it can be operated at a significantly lower voltage than is required for other types of transistors. This makes the MOSFET more suitable for use in low voltage applications. The low voltage operation also reduces power consumption and increases system efficiency.

The IPD65R225C7ATMA1 has a high on-resistance of 225 mOhm, which makes it suitable for a wide variety of applications. It also has a low thermal resistance of .83°C/W, meaning it is well suited for high temperature applications. The device also has a high drain-source breakdown voltage of 100V, which allows the device to be used in high-voltage applications.

The IPD65R225C7ATMA1 is a robust and reliable device which is suitable for a wide variety of power supply and high power applications. Its low on-resistance, high voltage capabilities, and low thermal resistance make it an ideal choice for many different applications.

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