Allicdata Part #: | IPD60R600CPATMA1-ND |
Manufacturer Part#: |
IPD60R600CPATMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 600V 6.1A TO-252 |
More Detail: | N-Channel 600V 6.1A (Tc) 60W (Tc) Surface Mount PG... |
DataSheet: | IPD60R600CPATMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.5V @ 220µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 60W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 550pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 3.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.1A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IPD60R600CPATMA1 is a vertical DMOS transistor module which belongs to the category of FETs, MOSFETs - Single. It is a integrated device that combines a transistor, an integrated gate drive and an integrated free-wheeling diode. This device provides a compact solution in applications that require high power switching. Generally speaking, IPD60R600CPATMA1 is an ideal choice for inverters, high speed DC motor control and switching power supply applications.
Applications of IPD60R600CPATMA1
The IPD60R600CPATMA1 can be used for a wide range of power sources that require high power switching and control. They are commonly used in the automotive industry due to their high efficiency. This module can also be found in industrial motors, DC drives, servo motors and other power applications. The device is designed to work efficiently in extreme temperature environments, so it is suitable for applications that require reliable thermal performance.
Features
The IPD60R600CPATMA1 is equipped with a variety of features that make them an ideal choice for many applications. They have a low on resistance characteristics which makes them highly efficient, especially in power applications. The device has both a voltage and current ratings up to 650VDC and 60A respectively. Additionally, the IPD60R600CPATMA1 has a low gate charge and very fast switching speed which is beneficial in high-speed applications.
Working Principle
The basic working principle of the IPD60R600CPATMA1 is very simple. The module is designed with an insulated gate that is used to change the conductivity of the transistor. When the gate voltage is applied, it creates an electric field which makes the transistor conductive. This allows current to flow from the source to the load. The device can also be used in reverse allowing the load to act as the source and the source to act as the load.
Conclusion
IPD60R600CPATMA1 is a vertical DMOS transistor module which is highly efficient when used in high power switching and control. This module can be used in a variety of applications, including automotive, industrial and DC drives. IPD60R600CPATMA1 is equipped with a low on resistance characteristics, high voltage and current ratings, low gate charge and fast switching speeds. The length of the working principle is relatively simple and due to these features, IPD60R600CPATMA1 is an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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