IPD60R1K4C6

Vgs(th) (Max) @ Id:	3.5V @ 90µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	PG-TO252-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	28.4W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	200pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	9.4nC @ 10V
Series:	CoolMOS™
Rds On (Max) @ Id, Vgs:	1.4 Ohm @ 1.1A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	3.2A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tape & Reel (TR)

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IPD60R1K4C6 is a field-effect transistor (FET) manufactured by Infineon Technologies and is one of their series of low on-state resistance, high voltage transistors. These transistors are designed to be used in a wide range of applications. They are suitable for load and switching applications in medium to high current circuits.The IPD60R1K4C6 is a single FET with a maximum drain current rating of 60A. It has a maximum drain-source voltage rating of 500V and is built with a low on-state resistance at a Vgs of -10V. This allows for higher efficiency operation and reduced power losses. It also has a maximum power dissipation rating of 135W and can operate at operating temperature ranges between -55°C and 175°C, making it suitable for a wide range of applications.The IPD60R1K4C6 transistor is a field-effect transistor with an N-Channel MOSFET structure. In this type of transistor, the current flow is controlled by a “gate” pin. The gate voltage is held at a certain level to allow current to flow through the transistor when it is in the “on” state. When the gate voltage is reduced to the cutoff voltage, the current flow is ceased and the transistor is switched off.This transistor can be used in a variety of applications including power supply design, motor and load control, high voltage switching circuits, pulse width modulation circuits, and more. It is also suitable for differential amplifier circuits and Class-D audio amplifiers.The IPD60R1K4C6 is a great choice for applications where a high current, low resistance, and high power dissipation are needed. It provides a low on-state resistance at a Vgs of -10V, a high drain current rating of 60A, and a maximum power dissipation rating of 135W. In addition, it has a wide operating temperature range, making it suitable for many different applications.When using the IPD60R1K4C6, it is important to keep in mind that it must be protected from high temperatures and humidity. It should also be properly mounted in order to ensure adequate cooling and performance. Finally, it is important to keep the gate voltage within the specified range and use the appropriate circuit protection components.In conclusion, the IPD60R1K4C6 is a great choice for a wide variety of applications where a high current, low resistance, and high power dissipation are needed. It has a low on-state resistance at Vgs of -10V, a high drain current rating of 60A, and a maximum power dissipation rating of 135W. This makes it suitable for many different applications including power supply design, motor and load control, high voltage switching circuits, pulse width modulation circuits, and differential amplifier circuits. It is important to keep in mind when using the IPD60R1K4C6 that it must be protected from high temperatures and humidity and properly mounted in order to ensure adequate cooling and performance.

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