IPD60R450E6ATMA1 Allicdata Electronics
Allicdata Part #:

IPD60R450E6ATMA1TR-ND

Manufacturer Part#:

IPD60R450E6ATMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V 9.2A TO252
More Detail: N-Channel 600V 9.2A (Tc) 74W (Tc) Surface Mount PG...
DataSheet: IPD60R450E6ATMA1 datasheetIPD60R450E6ATMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 74W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Series: CoolMOS™ E6
Rds On (Max) @ Id, Vgs: 450 mOhm @ 3.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IPD60R450E6ATMA1 is one of the most popular types of field effect transistors (FETs). It is a N-channel MOSFET which is commonly used in medium and high voltage analog and digital circuitry. The IPD60R450E6ATMA1 has a high power rating and can be used in a wide range of applications, from motor driver circuits to power switches.

The IPD60R450E6ATMA1 is a single device, meaning it is composed of just one gate, drain and source. The FET is used in voltage controlled applications and is ideal for high-frequency switching. This makes it an ideal choice for power electronic applications such as motor drivers, power supply modules and so forth.

The working principle behind the IPD60R450E6ATMA1 is simple. When a voltage is applied across the gate-source terminals, a current is generated in the channel which creates a voltage between the drain and source. This voltage is then used to control the conducting channel, resulting in the desired current flow.

The IPD60R450E6ATMA1 has a number of advantages when compared to other FETs. It has a high frequency switching capability, with a turn on and turn off time of less than 20 nanoseconds. It also has a relatively low power dissipation rating, making it ideal for applications that require very little power. It also has a high surge current rating, meaning it can handle large current spikes without damage.

The IPD60R450E6ATMA1 is used in a wide range of applications. It is particularly popular for use in motor control circuits, due to its ability to deliver high frequency signals without sacrificing efficiency. In addition, it can also be used for power supply modules, power switches, and in analog and digital circuits. Due to its low power dissipation rating, it is also well suited for use in applications which require extended battery life.

The IPD60R450E6ATMA1 is a popular MOSFET due to its high power rating and wide range of applications. It is an ideal choice for a variety of applications, ranging from motor control to power supply modules and more. Thanks to its low power dissipation and high frequency performance, it is suitable for a variety of applications in both digital and analog circuits.

The specific data is subject to PDF, and the above content is for reference

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