IPD60R950C6ATMA1 Discrete Semiconductor Products |
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Allicdata Part #: | IPD60R950C6ATMA1TR-ND |
Manufacturer Part#: |
IPD60R950C6ATMA1 |
Price: | $ 0.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 600V 4.4A TO252 |
More Detail: | N-Channel 600V 4.4A (Tc) 37W (Tc) Surface Mount PG... |
DataSheet: | IPD60R950C6ATMA1 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.31656 |
Vgs(th) (Max) @ Id: | 3.5V @ 130µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 37W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 280pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | CoolMOS™ C6 |
Rds On (Max) @ Id, Vgs: | 950 mOhm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.4A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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The IPD60R950C6ATMA1 transistor is a single-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed to deliver low on-resistance and gate charge. It is a perfect fit for industrial and automotive applications as it can take on a variety of tasks such as switching, amplification, and high-frequency pulse switching. The IPD60R950C6ATMA1 transistors are relatively small and lightweight and can easily be integrated into any design.
The primary working principle behind the IPD60R950C6ATMA1 transistors is that of voltage-controlled current regulation. Essentially, when a voltage is applied to the gate, it creates an electric field across the insulated gate. The field then changes the conductivity of the channel between the source and the drain, controlling the flow of current between the two. If a high voltage is applied, current is allowed to flow freely through the channel, while a low voltage results in the channel being more resistive, restricting current flow. This allows the transistor to be used as a switch, allowing a device to be turned on or off.
There are a variety of applications where the IPD60R950C6ATMA1 transistor is beneficial. Since it is designed to be compact and lightweight, it is often used in industrial, automotive, and consumer applications that require less space and weight. Additionally, it is capable of delivering a low gate charge, which is important for high-frequency pulse switching, such as in systems that utilize microcontrollers. Additionally, these transistors are capable of handling high temperatures, making them a great fit for automotive applications such as powertrain, lighting, and body electronics.
The IPD60R950C6ATMA1 transistors are capable of handling a wide range of current, from up to 6 amps in continuous-mode operation to more than 30 amps in pulsed-mode operation. This makes them well-suited for applications where higher-current sinks are needed, such as those involved with powertrain, lighting, and body electronics. They are also designed to be extremely fast, providing up to 4nsec of switching time.
The IPD60R950C6ATMA1 is a great fit for a variety of applications due to its low gate charge, high current capabilities, and fast switching time. Its small size and lightweight design allow it to be easily integrated into any system that requires a high-performance transistor. Additionally, its capability of handling both continuous and pulsed-mode operations make it ideal for a variety of industrial, automotive, and consumer applications.
The specific data is subject to PDF, and the above content is for reference
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