IPD60R950C6ATMA1 Allicdata Electronics

IPD60R950C6ATMA1 Discrete Semiconductor Products

Allicdata Part #:

IPD60R950C6ATMA1TR-ND

Manufacturer Part#:

IPD60R950C6ATMA1

Price: $ 0.35
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V 4.4A TO252
More Detail: N-Channel 600V 4.4A (Tc) 37W (Tc) Surface Mount PG...
DataSheet: IPD60R950C6ATMA1 datasheetIPD60R950C6ATMA1 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.31656
Stock 1000Can Ship Immediately
$ 0.35
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 37W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Series: CoolMOS™ C6
Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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The IPD60R950C6ATMA1 transistor is a single-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed to deliver low on-resistance and gate charge. It is a perfect fit for industrial and automotive applications as it can take on a variety of tasks such as switching, amplification, and high-frequency pulse switching. The IPD60R950C6ATMA1 transistors are relatively small and lightweight and can easily be integrated into any design. 

The primary working principle behind the IPD60R950C6ATMA1 transistors is that of voltage-controlled current regulation. Essentially, when a voltage is applied to the gate, it creates an electric field across the insulated gate. The field then changes the conductivity of the channel between the source and the drain, controlling the flow of current between the two. If a high voltage is applied, current is allowed to flow freely through the channel, while a low voltage results in the channel being more resistive, restricting current flow. This allows the transistor to be used as a switch, allowing a device to be turned on or off. 

There are a variety of applications where the IPD60R950C6ATMA1 transistor is beneficial. Since it is designed to be compact and lightweight, it is often used in industrial, automotive, and consumer applications that require less space and weight. Additionally, it is capable of delivering a low gate charge, which is important for high-frequency pulse switching, such as in systems that utilize microcontrollers. Additionally, these transistors are capable of handling high temperatures, making them a great fit for automotive applications such as powertrain, lighting, and body electronics. 

The IPD60R950C6ATMA1 transistors are capable of handling a wide range of current, from up to 6 amps in continuous-mode operation to more than 30 amps in pulsed-mode operation. This makes them well-suited for applications where higher-current sinks are needed, such as those involved with powertrain, lighting, and body electronics. They are also designed to be extremely fast, providing up to 4nsec of switching time. 

The IPD60R950C6ATMA1 is a great fit for a variety of applications due to its low gate charge, high current capabilities, and fast switching time. Its small size and lightweight design allow it to be easily integrated into any system that requires a high-performance transistor. Additionally, its capability of handling both continuous and pulsed-mode operations make it ideal for a variety of industrial, automotive, and consumer applications. 

The specific data is subject to PDF, and the above content is for reference

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