IPD60R1K5CEATMA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IPD60R1K5CEATMA1 is a high-frequency discrete MOSFET manufactured by Infineon Technologies. It is a single N-channel enhancement MOSFET with an ESD protection feature. The device is designed for low-power switching applications such as switching power supplies, DC-DC converters, cellular phones, and printers.

As a single N-channel enhancement MOSFET, IPD60R1K5CEATMA1 is a type of transistor which consists of a channel of n-type material between source and drain terminals. This MOSFET is operated by applying a bias voltage to the gate terminal which creates a field effect and in turn a current path between source and drain. However, when no bias voltage is applied to the gate, the MOSFET is completely off and no current flows between the source and the drain.

The typical maximum drain source voltage of IPD60R1K5CEATMA1 is 60V, its drain current (continuous) is 5A, and its drain-source on-state resistance is 0.08 Ohm. The device also has an excellent gate threshold voltage which is very important in MOSFETs as it controls the device on-state resistance. Additionally, the device has a good drain-source capacitance which improves the switching characteristics.

In addition to its low-power applications, IPD60R1K5CEATMA1 also has a high-frequency performance which makes it suitable for use in switching products with high-frequency applications. The device also has an ESD protection feature which helps in protecting the device from Electro Static Discharge (ESD). This is an important feature as it helps protect the device from ESD events that can cause damage to the MOSFET.

Overall, IPD60R1K5CEATMA1 is a very useful device and is suitable for a wide variety of applications. Its features make it ideal for use in various low-power switching applications, as well as in high-frequency applications. Additionally, its ESD protection feature helps ensure that the device is safe from damage due to Electro Static Discharge events.

The specific data is subject to PDF, and the above content is for reference