IPD60R600E6 Discrete Semiconductor Products

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The IPD60R600E6 is a single N-channel power MOSFET developed for use in high performance, low power dissipation applications. It is widely used by automotive, medical and industrial systems. This device is widely used for switching power supplies, DC/DC converters, battery packs, motor control applications, and more. Its advanced design also offers excellent thermal performance, making it suitable for high power, high efficiency applications such as Ultra-Light Portable Electronics, Industrial, and Power Distribution.

The IPD60R600E6 is a highly reliable, robust and efficient device with extremely low on-resistance (RDS-ON). It features low gate charge (Qg) and a low thermal resistance which makes it ideal for switching applications at high frequencies and makes it capable of delivering high current density. The device also features a fast switching speed and a low input capacitance (Ciss) which makes it suitable for use in high-switching frequency and high power-loading applications such as DC/DC converters, motor drivers, DC/AC converters, inverters, and more.

The IPD60R600E6 is a single N-channel Power MOSFET, which is specially designed for low power dissipation operations. It has a high blocking voltage (Vdss) of 600V, which allows it to be used in applications with a high input voltage level. This device has a low gate-source threshold voltage (VGS) of 2.5V. This low threshold voltage helps in reducing the power consumption of the system by allowing lower gate drive currents. The low input capacitance (Ciss) of this MOSFET allows it to switch faster with lesser power losses, making it suitable for high-frequency switching applications.

The IPD60R600E6 has a high maximum drain-source breakdown voltage (Vdss) of 600V, an avalanche energy rating of 1A, and an on-state resistance (RDS-ON) of 0.35mO. These features make it ideal for high-power applications requiring good efficiency, robustness and reliability.

The IPD60R600E6 has a high current rating making it suitable for high current switching applications. Its fast switching speed and low input capacitance allow it to switch faster with lesser power losses. It also has a low reverse transfer capacitance providing protection from voltage spikes and transients. The device also has an extended drain-source breakdown voltage (Vdss) of 600V which makes it suitable for use in high input voltage level applications.

The IPD60R600E6 is a versatile device and its applications are far reaching. It is widely used in switching power supplies, DC/DC converters, battery packs, motor control applications, and more. In addition, its low input capacitance makes it suitable for use in switching frequency and power-loading applications. The device also has low gate charge and low thermal resistance making it ideal for high efficiency, high current density, and high speed switching applications in a variety of automotive, medical, and industrial applications.

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