IPD60R2K0C6ATMA1

Vgs(th) (Max) @ Id:	3.5V @ 60µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	22.3W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	140pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	6.7nC @ 10V
Series:	CoolMOS™ C6
Rds On (Max) @ Id, Vgs:	2 Ohm @ 760mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	2.4A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IPD60R2K0C6ATMA1 Application Field and Working Principle

The IPD60R2K0C6ATMA1 is a high-performance two gate vertical N-channel MOSFET developed by ROHM Semiconductor. It is a single-polarity vertical-channel N-channel MOSFET, designed for use in commercial, industrial, and automotive applications. It is highly efficient, and provides a high level of device protection, while still providing excellent performance.This product is a low-voltage LDMOS (LDMOS) MOSFET, meaning it is capable of handling very high currents with a low voltage drop. It is most commonly used in power supplies and switching circuits, where its ability to handle high power with a low voltage drop comes in handy. In these applications, the MOSFET will have a high specific on-state resistance (Rds-on), and low drain-source capacitance (Cds). This makes it ideal for applications that require fast switching, such as power supplies, where the quick switching helps to conserve energy. This product also is capable of excellent performance when used in ripple filter circuits.The IPD60R2K0C6ATMA1 can also be used in power supplies and switching circuits to improve switching speed and efficiency. With its high-current capability, the device can handle high peak currents without having to be run at higher voltages. This helps to reduce voltage ripple and secondary losses, resulting in improved output power efficiency and reduced power consumption.In other applications, the IPD60R2K0C6ATMA1 can be used as a low-resistance switch, allowing higher power to be handled with less voltage drop. This makes it ideal for applications such as automotive relays, or in automotive electronics, where higher power control is necessary. The excellent diode characteristics of this device also make it well suited for low-side switches and protection circuits.Finally, the IPD60R2K0C6ATMA1 can be used as a high-end fashion choice for electrical applications such as automotive lighting and audio equipment, where its efficiency and performance make it a perfect choice.The IPD60R2K0C6ATMA1 is an ideal option for commercial, industrial, and automotive applications that require fast switching, low on-state resistance, and high drain-source capacitance. Its low voltage drop, high current capability, and excellent diode characteristics make this device an ideal choice for automotive electronics, power supplies, and switching circuits. Additionally, its excellent performance and style make it an excellent fit for electrical applications such as automotive lighting and audio equipment. The IPD60R2K0C6ATMA1 MOSFET is a must-have for any of these applications.

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