IPD60R385CPATMA1

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The IPD60R385CPATMA1 is a single N-channel enhancement-mode power MOSFET that is specifically used in high frequency power converters, automotive, and electronic ballast applications.

This MOSFET is a depletion-mode field-effect transistor that is most commonly used as a voltage-controlled switch. It uses a channel between the source and drain electrodes to control the conduction. In this type of transistor, the channel is either “on” and allows current to flow between the source and drain or “off” and does not allow current to flow.

The IPD60R385CPATMA1 can also be used as an amplifier to increase input signal power and as an active load that adjusts its resistance depending on the control voltage. The use of this transistor makes it possible to amplify weak signals, to improve linearity, reduce distortion, and to reduce noise.

The IPD60R385CPATMA1 can be used for a variety of applications, including high frequency power converters, telecommunication, switching power supplies, automotive, and electronic ballast.

In power converters and electronic ballast applications, the IPD60R385CPATMA1 typically acts as a switch and gate driver. It also is capable of lowering conduction and switching losses, along with improving efficiency, while operating at switching frequencies up to 1 MHz. The transistor can also be used in voltage-controlled oscillators, capacitive switching circuits, and power converters where the channel loss should be kept low. Furthermore, the integrated protection features of this transistor, such as two back to back zener protection diodes and an active clamp allow for improved safety under overvoltage conditions.

In addition, this MOSFET transistor offers high current carrying capacity up to 60A. With a high drain-to-source breakdown voltage of 55V, the IPD60R385CPATMA1 exhibits low on-resistance of 0.385Ω. It also provides an “on” resistance of 2.5Ω and a “off” resistance of 0.45Ω.

In terms of power dissipation, this MOSFET has a maximum allowable power dissipation of 42W and a maximum operating temperature range of -40°C to 150°C. For safety purposes, it has a maximum gate-to-drain voltage (VGS) of ±20V.

Overall, the IPD60R385CPATMA1 is an enhancement-mode power MOSFET that is best suited for applications that are in need of preventing conduction and switching losses while operating at switching frequencies up to 1 MHz. It can be used in a wide variety of applications, such as high frequency power converters, telecommunication, switching power supplies, automotive, and electronic ballast.

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