IPD60R520C6ATMA1 Allicdata Electronics

IPD60R520C6ATMA1 Discrete Semiconductor Products

Allicdata Part #:

IPD60R520C6ATMA1TR-ND

Manufacturer Part#:

IPD60R520C6ATMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V 8.1A TO252
More Detail: N-Channel 600V 8.1A (Tc) 66W (Tc) Surface Mount PG...
DataSheet: IPD60R520C6ATMA1 datasheetIPD60R520C6ATMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 66W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 512pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23.4nC @ 10V
Series: CoolMOS™ C6
Rds On (Max) @ Id, Vgs: 520 mOhm @ 2.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IPD60R520C6ATMA1 is a special type of transistor that falls into the category of field-effect transistors (FETs). These devices are used to control the flow of electrical charge from one electrical device to another by regulating the voltage and current levels, allowing for the efficient and safe transmission of electricity. This particular type of transistor is a single-type FET, also known as an n-channel MOSFET, which provides excellent current carrying capacity and voltage control.

An IPD60R520C6ATMA1 application can be found in many electronic circuits, such as power supplies, switching circuits, signal amplifiers, and light-emitting diode (LED) circuits. This device can also be used in voltage regulation circuits, allowing high voltage levels to be safely and reliably regulated at a lower level. Additionally, an IPD60R520C6ATMA1 can also be used in bidirectional applications such as audio power amplifiers and volume control circuits.

The IPD60R520C6ATMA1 transistor operates using a field-effect action. This means that a voltage applied to the gate causes a change in the conductivity, or resistance, of the device. This effect is known as a “body effect” and results in the control of current and voltage in the circuit.

The IPD60R520C6ATMA1 works by controlling the voltage across the drain and source terminals. The voltage applied to the gate then affects the resistance in the channel, regulating the flow of current. This makes the IPD60R520C6ATMA1 ideal for both low and high power applications.

In addition to their wide range of uses, the IPD60R520C6ATMA1 also offers excellent performance in terms of power efficiency and low power consumption. This transistor has a low ON resistance and provides very low switch-on and switch-off times. It is also highly stable and offers excellent noise immunity, making it a popular choice for many applications.

The IPD60R520C6ATMA1 is a versatile and reliable transistor, and is often used in a wide range of electronic circuits and devices. Its use of a field-effect action and its excellent performance in terms of efficiency, power consumption, and noise immunity make it an ideal choice for many different types of circuits and applications.

The specific data is subject to PDF, and the above content is for reference

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