IPD60R600P6

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The IPD60R600P6 is a N-Channel enhancement-mode power Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) offering improved efficiency and low on-state resistances. In this article, we shall discuss its application field, benefits as well as working principle.

Application Field of IPD60R600P6

The IPD60R600P6 has a wide range of current handling capabilities, with a maximum drain rating of 70A at a maximum junction temperature of 150℃. This makes the IPD60R600P6 a suitable choice for wide range of applications such as low side and high side switch drivers, DC/DC converters and synchronous rectification applications. This MOSFET can be used in high frequency topologies which require the ability to handle high transients and other applications such as high density servers, industrial base stations and CCTV cameras.

Benefits of IPD60R600P6

The IPD60R600P6 affords designers some unique benefits compared to other MOSFETs in its class; these benefits include an extremely low on-state resistance of 15mΩ full cycle, high peak current ratings of 70A and an internal dV/dt protector. Alternatively, the IPD60R600P6 contains an intrinsic Kelvin-source connection which simplifies the gate drive design.

The IPD60R600P6’s extremely low on-state resistance and high peak current ratings promote greener more efficient operation and reduce energy losses in the circuit. This results in higher power efficiency. Additionally, the internal dV/dt protector helps to prevent catastrophic circuit failure that could be caused by inadvertent application of high dV/dt due to external circuit events such as line inductance or capacitance.

Working Principle of IPD60R600P6

MOSFETs work by modulating the conductivity of a channel between the source and drain terminals in response to a gate voltage. When the MOSFET is in the off-state, the channel between the source and drain terminations remain completely inhibited, thus no current can flow between the two terminals. When the MOSFET switches on, a channel is created between the source and drain terminations, thus allowing current to flow and the device will act as a low resistance “On” switch.

In the case of the IPD60R600P6, the extremely low on-state resistance is due to the use of a low-resistance power MOSFET die. This low-resistance power MOSFET die increases the efficiency of the drain-source channel conduction, resulting in a lower on-state resistance and increased power efficiency.

The IPD60R600P6 offers designers excellent performance and improved power efficiency in a wide range of applications. It features an extremely low on-state resistance, high peak current ratings and internal dV/dt protection, making it an ideal choice for high-power applications that require improved efficiency and robust protection.

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