IPD60R380C6ATMA1

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The IPD60R380C6ATMA1 is a two power MOSFET designed to provide a high performance solution for both low-voltage and high-current switching applications. It has an advanced processing technology and expanded power and on-resistance performance that make it ideal for use in a variety of power conversion circuits. The IPD60R380C6ATMA1 is available in a low-ohmic, space saving, do-it-yourself (DIY) package.

Application field

The IPD60R380C6ATMA1 is suitable for a vast range of applications, from automotive motor controllers, robotics and robotics control systems, to power transistors and high-side drive MOSFETs. Due to its versatile switching capabilities and its robust construction, it is also suitable for a range of other applications, such as DC/DC converters and integrated packaging lines.

The IPD60R380C6ATMA1 can also be used in power amplifier designs and H-bridge motor driver circuits, as well as applications such as switching and RF power transistors. Due to its low input voltage and low on-resistance capabilities, it is also suitable for high-current Voltage Regulator Modules (VRMs) and boost converters.

Working Principle

The IPD60R380C6ATMA1 is a single drain, N-channel MOSFET. It is designed to operate with an input voltage of 10V or greater and is capable of withstanding up to 20A of continuous current and up to 100A of peak current. The MOSFET is optimized to provide high performance and low power consumption, while also providing protection against short circuit conditions. When the MOSFET is in the on-state, it can achieve a drain-source on-resistance of only 380 mΩ.

The input of the device is connected to a Gate terminal. When a positive voltage is applied to the Gate, it will turn the MOSFET on. On the other hand, when the Gate is connected to a negative voltage, the MOSFET will turn off. The Drain is connected to the load, and the Source is connected to ground. When the MOSFET is in the on-state, current will flow through the MOSFET from the Drain to the Source, delivering power to the load. The IPD60R380C6ATMA1 is designed to have a low input capacitance, which ensures that it can switch quickly and efficiently.

The IPD60R380C6ATMA1 also features a built-in protection circuit that will protect against power overloads, short-circuits, and spikes. When an overcurrent condition is detected, the protection circuit will turn the MOSFET off, preventing damage to the device and the circuit. It is also designed to dissipate the heat generated in order to protect the device from thermal runaway.

The IPD60R380C6ATMA1 is a versatile and highly efficient MOSFET designed to provide excellent performance in a wide range of applications. With its high current capacity, low on-resistance, fast switching capabilities, and built-in protection circuit, the IPD60R380C6ATMA1 is an excellent choice for a variety of power conversion circuits.

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