IPD60R460CEAUMA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPD60R460CEAUMA1 is one of the most efficient, durable, and reliable semiconductor technologies available to meet the needs of a variety of applications. It is a single mode Field Effect Transistor (FET) designed with low voltage, low power and high speed design characteristics. This device combines high input impedance, low output capacitance, and low reverse transfer capacitance, which make it ideal for use in many different applications.

This particular FET is a part of the IPD60R family available from multiple manufacturers and includes a rated maximum drain-source voltage of 60V and a drain current of 460mA (160A per 100um wide strip). The device also has an on resistance of 60 m Ω minimum at 25°C and a maximum of 40 m Ω at 100°C. It also offers a PSRR at 100mV of 60dB minimum, a VGS leakage at 10V of 10mA maximum, and a maximum of 150mV for gate-source voltage.

IPD60R460CEAUMA1 is suitable for many applications such as high voltage, low voltage, low power, and high speed switching, linear and pulse receivers, relay drivers, logic circuit drivers, power management and data converters. This FET works by applying a positive voltage to the gate in order to induce a conductive channel between the source and drain. This helps reduce switching times and increases the efficiency of a circuit. The output capacitance is also reduced in order to reduce switching times as well.

By properly selecting the drain-source voltage and gate voltage, the IPD60R460CEAUMA1 can be applied to a variety of applications including industrial, automotive, medical, telecom, and aerospace. This device can also be used to drive high power loads, such as relays, by multiplying the output power by utilizing multiple devices. The device also has high temperature and radiation tolerance, which allows for long-term device reliability.

The IPD60R460CEAUMA1 is a reliable, efficient, and cost-effective FET for a wide range of applications. Its ability to provide low power solutions, with high impedance and reduced switching delay, make it ideal for many applications in various industries. Moreover, its resistance to high temperature, radiation, and its high PSRR at low voltage make this the preferred choice when performance and reliability counts.

The specific data is subject to PDF, and the above content is for reference