IPD65R400CEAUMA1 Allicdata Electronics
Allicdata Part #:

IPD65R400CEAUMA1TR-ND

Manufacturer Part#:

IPD65R400CEAUMA1

Price: $ 0.32
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 650V TO-252
More Detail: N-Channel 650V 15.1A (Tc) 118W (Tc) Surface Mount ...
DataSheet: IPD65R400CEAUMA1 datasheetIPD65R400CEAUMA1 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.29182
Stock 1000Can Ship Immediately
$ 0.32
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 118W (Tc)
FET Feature: Super Junction
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 400 mOhm @ 3.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IPD65R400CEAUMA1 is an advanced type of semiconductor component, known as an insulated gate bipolar transistor (IGBT) module. This type of component is a combination of a diode, a transistor, and a thyristor, and harnesses their properties for the purpose of controlling power distribution and switching. IPD65R400CEAUMA1 enjoys wide application in numerous energy-saving and energy-conversion processes such as in AC-DC converters for drives, welding machines and other industrial equipment.

In its most basic description, IPD65R400CEAUMA1 includes an Integrated Gate Commutated Thyristor (IGCT) and a Field Effect Transistor (FET) with a collector connected to the drain. The power terminals of the module are constructed with nickel-chromium alloy and the gate and control voltage terminals are made of mica. The IPD65R400CEAUMA1 is a complete module that is ready for applications in customer products and does not require any additional components. This ability to be integrated into customer designs greatly simplifies the development process.

The IPD65R400CEAUMA1 is the ideal choice for power supply applications, communications equipment, and air conditioners due to its superb switching performance, high efficiency, and low power consumption. It is capable of controlling power up to 400V, hence reducing the occurrence of losses, and is designed to take up as little space as possible, making it ideal for large-scale integrated systems. Its compliance with RoHS and UL, (Recycling of Hazardous Substances Directive and Underwriters Laboratory standards), makes it the ideal choice for applications where environmental safety is a major concern.

The working principle of the IPD65R400CEAUMA1 is based on the silicon controlled rectifier or SIC principle. It uses an internal gate driver to switch the FET and IGBT transistors. During the switching process, the IGBT acts like a fuse and when it detects a fault, it will operate to limit the current in the circuit. This feature makes it particularly useful for applications that require fusing and protection from short-circuit damage.

In operation, the FET is used to control the power flow in the circuit and it acts mainly as an amplifier of the control signal applied to the gate terminal.The IPD65R400CEAUMA1 is also used as a bidirectional switch, as it can be used to control the direction of power as well as the intensity of the power flow.When the gate voltage is applied to the IPD65R400CEAUMA1, the FET switches on and the IGBT is activated, allowing power to flow through the circuit. The IGBT will then control the current flow and help maintain the operation of the circuit.The main advantages of using the IPD65R400CEAUMA1 module are its low power consumption, which makes it more efficient, as well as its low price, which makes it a popular choice for low-cost applications. It is also a rugged and reliable component and can endure high temperature and shock conditions, making it suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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