IPI045N10N3GXKSA1

Vgs(th) (Max) @ Id:	3.5V @ 150µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	PG-TO262-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	214W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	8410pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	117nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	4.5 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Current - Continuous Drain (Id) @ 25°C:	100A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IPI045N10N3GXKSA1, manufactured by Infineon, is a high-voltage, low-on-resistance N-channel MOSFET. It is a single device capable of handling voltages up to 500V and currents up to 40A. The device is optimized for fast and efficient switching. This makes it ideal for power conversion and motor control applications.The IPI045N10N3GXKSA1 has very low-on-resistance that allows very low-dropout efficiency, even when switching large currents. It has a wide operating temperature range of -55 to 175°C and is designed for automotive, consumer, industrial and medical applications.The MOSFET works by using a gate to control the flow of current through the device. The gate serves as a switch to turn the current on and off. When the gate voltage is applied (Vgs), the electrons from the N-channel are attracted to the positively charged gate. This causes the electrons to move from the N-channel to the P-channel, allowing current to flow. When the gate voltage is removed, the electrons move back to the N-channel, thus turning the current off.In the IPI045N10N3GXKSA1, the N-channel and P-channel are both connected to the same source, but the source is connected to the gate via a resistor. This creates a voltage divider, which allows the user to control the gate voltage. The resistor also serves to protect the gate from over-voltage.The IPI045N10N3GXKSA1 is well suited for applications that require high switching speeds, such as computer power supplies, motor control and AC/DC converters. It is also used for load and relay switching, audio amplifiers and other high-power applications.This MOSFET has several advantages over traditional transistors. It is smaller, faster and can handle higher voltages and currents than a traditional transistor. It is also relatively inexpensive and is easy to interface with integrated circuits.In summary, the IPI045N10N3GXKSA1 is a single, high voltage, low on-resistance N-channel MOSFET capable of handling high voltages and currents. It is optimized for fast and efficient switching, has a wide operating temperature range, and is well suited for a variety of applications. It offers advantages over traditional transistors in size, speed, power handling and cost.

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