IRF5810TR

Series:	HEXFET®
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	2 P-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	2.9A
Rds On (Max) @ Id, Vgs:	90 mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id:	1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	9.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	650pF @ 16V
Power - Max:	960mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:	6-TSOP

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The IRF5810TR is an advanced power transistor array with applications in motor control, power supply and automotive power. Developed and manufactured by International Rectifier, this power transistor array is designed to provide maximum power in minimum space.The IRF5810TR is an integrated circuit composed of a series of field effect transistors (FETs) arranged in rows and columns. FETs are semiconductor devices with three terminals: gate, source and drain. This special type of transistor is also known as a Metal-Oxide-Silicon (MOS) transistor and is the most commonly used type of transistor in modern electronic circuits.The IRF5810TR is a power MOSFET array that couples power MOSFETs with complementary logic gates. A power MOSFET is a voltage-controlled, unipolar transistor with three terminals. The source, drain and gate are all insulated from each other, allowing for a greater range of control over the current flow. The IRF5810TR also has two additional terminals, allowing it to control two transistors in tandem.The IRF5810TR’s application field is ideally suited for motor control, power supply, automotive and other distributed power systems. With the ability to control two transistors in tandem, the IRF5810TR is an efficient, compact solution for switching power in multiple directions. Its wide range of gate-to-source voltage levels, gate-to-drain breakdown voltage and output current ratings make it an ideal choice for a variety of applications.The working principle of the IRF5810TR is similar to that of any power MOSFET array. When the gate voltage is applied to one of the FETs in the array, a conducting channel is created between the source and drain terminals. This allows current to flow from the source to the drain and vice versa. This flow of current is modulated by changing the gate voltage, giving the IRF5810TR fine control over the current flow.The IRF5810TR is a high performance power MOSFET array with features that make it ideal for motor control, power supply and automotive applications. With the ability to control two transistors in tandem, it is an efficient and compact solution for distributed power systems. Its wide range of gate-to-source voltage levels, gate-to-drain breakdown voltage and output current ratings give it the versatility to handle a variety of applications, making it the ideal choice for a variety of power management solutions.

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