| Allicdata Part #: | IRF5210PBF-ND |
| Manufacturer Part#: |
IRF5210PBF |
| Price: | $ 1.84 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET P-CH 100V 40A TO-220AB |
| More Detail: | P-Channel 100V 40A (Tc) 200W (Tc) Through Hole TO-... |
| DataSheet: | IRF5210PBF Datasheet/PDF |
| Quantity: | 5619 |
| 1 +: | $ 1.84000 |
| 10 +: | $ 1.78480 |
| 100 +: | $ 1.74800 |
| 1000 +: | $ 1.71120 |
| 10000 +: | $ 1.65600 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 200W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2700pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 60 mOhm @ 24A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IRF5210PBF is a high-power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) that has been designed for a variety of high-power applications. It can work in either a N-channel configuration or a P-channel configuration, depending on how it is connected. The IRF5210PBF is a versatile component that can be used for both analog and digital applications. In addition to being a high-power component, the IRF5210PBF has an extremely low on-resistance that allows it to switch very quickly and efficiently. It is also capable of operating at both low and high voltages, allowing it to be used in applications such as H-Bridge motor control, DC motors, and solar inverters.The IRF5210PBF MOSFET consists of a substrate (or “bulk”) and five terminals – the gate, source, drain, body-connect, and source connection. The source and drain connections are the input and output, respectively, while the body-connect is the connection to the substrate. The gate connection is used to control the current flow between the source and drain. The gate acts as a switch, and when the gate voltage is increased, it attracts more electrons and increases the current between the source and drain. Conversely, when the gate voltage is decreased, it repels electrons, thus decreasing the current between the source and drain.The IRF5210PBF is capable of working at both high and low voltages, making it suitable for a variety of applications. Its low on-resistance makes it ideal for high-frequency applications, such as switching power supplies, motor drivers, and high-speed DC motor controllers. Additionally, the IRF5210PBF can provide a large current range, up to 30 A.The IRF5210PBF is a versatile component and is suitable for a variety of applications. It is commonly used in DC motor control, switching power supplies, stepper motor controls, DC-DC converters, and power amplifier circuitry. The IRF5210PBF is an effective component to use when low on-resistance, high voltage, and high current capabilities are needed.In conclusion, the IRF5210PBF is a high-power MOSFET that is suitable for a variety of applications, such as DC motor control, switching power supplies, stepper motor controls, DC-DC converters, and power amplifier circuitry. It has an extremely low on-resistance, allowing it to switch quickly and efficiently. The IRF5210PBF is also capable of working at both low and high voltages and can provide a large current range. The IRF5210PBF is a versatile component that can be used for a variety of high-power applications.
The specific data is subject to PDF, and the above content is for reference
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| IRF5806 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 20V 4A 6-TSOP... |
| IRF5802TRPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 150V 0.9A 6-T... |
| IRF520NLPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 9.7A TO-... |
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| IRF5210STRLPBF | Infineon Tec... | -- | 1000 | MOSFET P-CH 100V 38A D2PA... |
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| IRF510 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 5.6A TO-... |
| IRF510STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 5.6A D2P... |
| IRF5803D2PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 40V 3.4A 8-SO... |
| IRF520NS | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 9.7A D2P... |
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| IRF520N | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 9.7A TO-... |
| IRF520 | STMicroelect... | -- | 1000 | MOSFET N-CH 100V 10A TO-2... |
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IRF5210PBF Datasheet/PDF