Allicdata Part #: | IRF510-ND |
Manufacturer Part#: |
IRF510 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 5.6A TO-220AB |
More Detail: | N-Channel 100V 5.6A (Tc) 43W (Tc) Through Hole TO-... |
DataSheet: | IRF510 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 43W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 180pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 8.3nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 540 mOhm @ 3.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.6A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRF510 field effect transistor, or FET, is a type of transistor commonly used in low noise circuits and analog applications, as well as an audio amplifier that requires high quality, low distortion audio output. It is an insulated gate field effect transistor (IGFET) and is one of the few types of FETs available for applications where noise is a critical factor.
The IRF510 is a single field effect transistor, meaning it has a single channel in its construction. The transistor has a drain and a source, connected to two terminals, and a gate terminal. The gate is what controls the current that is flowing from the source to the drain. The gate can either be positive or negative with respect to the source and drain, and it is this voltage that then determines the current flow within the transistor.
Generally, the positive voltage at the gate will cause a flow of current from the source to the drain, while a negative voltage will cause no current to flow. This property allows the device to be used as an on/off switch, allowing a signal to pass through when the gate voltage is at one value, and preventing it from doing so when the gate voltage is at another. This voltage also determines the variables of the current flow, including its speed, voltage, and power.
The IRF510 is a popular choice in the design of audio amplifiers because it has a low distortion output and low noise level. This is due to the fact that the device can handle high voltage and power levels without causing any audible distortion or noise. Additionally, the low power consumption and low input bias current also make the IRF510 an attractive choice for low-noise and energy-efficient circuits.
The IRF510 also has a few other applications, such as being used as a switch in a power supply or for the protection of other circuits. It can also be used as a voltage regulator, in which its gate voltage is used to control the output voltage of the supply. It has also been used successfully in radio receiver applications, where its low noise capabilities help to increase the sensitivity of the receiver.
In conclusion, the IRF510 is a useful, versatile type of field effect transistor, possessing useful properties such as low distortion and noise production, low power consumption, and a wide range of application types. Its low cost, availability, and ease of use make it a popular choice for those looking for an efficient, reliable, and versatile FET solution.
The specific data is subject to PDF, and the above content is for reference
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