IRF5800TRPBF Allicdata Electronics
Allicdata Part #:

IRF5800TRPBFTR-ND

Manufacturer Part#:

IRF5800TRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 30V 4A 6-TSOP
More Detail: P-Channel 30V 4A (Ta) 2W (Ta) Surface Mount Micro6...
DataSheet: IRF5800TRPBF datasheetIRF5800TRPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: Micro6™(TSOP-6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 85 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRF5800TRPBF is a single N-Channel HexFET Power MOSFET designed to withstand extreme conditions of operation. This type of transistor is an example of a Field Effect Transistor (FET). FETs control the current flow through an electric field, rather than a more traditional resistor. The IRF5800TRPBF, and other Power MOSFETs, are designed to handle higher operating voltages and higher amperages than other FETs.The IRF5800TRPBF is a 55V, 20A, N-Channel MOSFET with a very low RDS(ON) rating of 7.8mΩ. This makes it suitable for high power applications, such as automotive, power supplies, and power amplifier circuits.The IRF5800TRPBF has a breakdown voltage of 55V and a maximum drain source voltage of 55V. Additionally, it has a rated drain current of 9A and a maximum drain current of 20A. The device also has a direct gate-source voltage rating of 20V and a maximum gate charge of 28nC. The RDS(ON) of this device allows for high efficiency switching with low switching and conduction losses, which is ideal for power switch applications.The IRF5800TRPBF is a P-Channel MOSFET, which means it has a negative polarity. This means that the gate voltage is opposite to the polarity of the voltage applied to the drain and source. This is important to keep in mind when designing circuits using this device. A positive voltage on the gate will cause the MOSFET to switch on, and a negative voltage on the gate will cause the MOSFET to switch off.The working principle of the IRF5800TRPBF is relatively straightforward. When a voltage is applied to the gate, it creates an electric field. This electric field allows the current to flow through the transistor and provides the necessary switching of the power circuit.In application fields, the IRF5800TRPBF is most commonly used in automotive circuits and power supplies. The device is well suited for switching power, as it can handle the high voltage and high amperage of these applications. The device can also be used in audio amplifiers, where its low RDS(ON) rating allows for efficient switching and low conduction losses. The IRF5800TRPBF is also useful in consumer electronics, for applications such as switching power supplies or for digital logic circuits.In conclusion, the IRF5800TRPBF is a single N-Channel HexFET Power MOSFET designed to handle high voltage and amperages. Its low RDS(ON) rating makes it ideal for high power applications, such as automotive, power supplies, and power amplifier circuits. In application fields, the device is most commonly used in automotive, power supplies, and audio amplifiers.

The specific data is subject to PDF, and the above content is for reference

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