Allicdata Part #: | IRF540NL-ND |
Manufacturer Part#: |
IRF540NL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 33A TO-262 |
More Detail: | N-Channel 100V 33A (Tc) 130W (Tc) Through Hole TO-... |
DataSheet: | IRF540NL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 130W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1960pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 71nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 44 mOhm @ 16A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 33A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRF540NL is a powerful N channel enhancement mode power MOSFET (metal-oxide semiconductor field effect transistor or MOSFET) that has numerous applications. It is also known as IRF540MN or IRF540N, depending upon the manufacturer. It is commonly used in high-power switching applications, such as switching the voltages in automotive and home security systems, motor control, and in power supplies or motor control applications in industry. It is most used as a linear switch in the semiconductor industry. Additionally, it can also serve as a voltage regulator by controlling the on and off times of the device.
The IRF540NL is a N-channel device, meaning that electrons can flow from the source to the drain freely when the part is turned on. Its structure is such that when the gate voltage is applied, the drain and source terminals become connected and the current flows between them. It is an enhancement mode device, whose operation can be explained by the following details.
When an electric field is applied to the gate terminal of the MOSFET, the surface of the gate is exposed to an electric field. This causes a depletion layer to form at the interface between the gate and the semiconductor surface. This makes it difficult for electrons to move through the semiconductor layer, thus restricting current flow. However, when the gate voltage is increased, the depletion layer contracts and the current flows freely through the device.
The IRF540NL has several notable features. It has a maximum drain-source current of 540A, a range of operating voltages from 10 to 700V, and a drain-source dielectric breakdown voltage of 500V. It also has a maximum power dissipation of 85W and a maximum drain-source on state resistance of 4.2ohms. It is capable of both logic level and avalanche operation and its switching times are faster than those of MOSFETs with slower logics. It has a very low on state resistance, allowing it to operate efficiently. Furthermore, it is able to handle higher temperatures and hence is suitable for applications that are exposed to higher temperatures.
The IRF540NL is used in various applications such as lightning control, motor control, switching, and power supplies. It is also used in power conditioning circuits and as rectifiers in power supply applications. It is also employed in computers, communications equipment and audio equipment.
In conclusion, the IRF540NL is a powerful N-channel MOSFET that has numerous applications. It is most used as a linear switch in the semiconductor industry and is also commonly used in high-power switching applications. Its structure and operation can be explained and its features and uses are fairly extensive. Thus, it can be seen that the IRF540NL is a highly versatile and effective device that is suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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