IRF530STRR Allicdata Electronics
Allicdata Part #:

IRF530STRR-ND

Manufacturer Part#:

IRF530STRR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 100V 14A D2PAK
More Detail: N-Channel 100V 14A (Tc) 3.7W (Ta), 88W (Tc) Surfac...
DataSheet: IRF530STRR datasheetIRF530STRR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 160 mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRF530STRR is a type of Insulated Gate Bipolar Transistor (IGBT) commonly used in various electronic devices. It is a single-gate FET (Field Effect Transistor) and is typically used in applications involving switches, relay contactors, and power supplies. The IGBT is a voltage-controlled device, meaning that it can be switched on or off by applying a voltage to its gate. This makes it suitable for applications that require high speed switching and power dissipation.

The IRF530STRR is known for its low on-state resistance, a maximum current of 5 amps, and a maximum voltage of 50 volts. It is capable of operating at a frequency of up to about 5 MHz. The device also features built-in EMI suppression and overvoltage protection, which makes it a reliable choice for high-frequency applications.

The IRF530STRR is designed to be used in a variety of applications, such as switch mode power supplies, motor controls, relay contactors, and circuit breaker designs. It is typically used to switch high current and voltage in low power applications, such as those involving switching transistors, relay contactors, or circuit breakers. The device can also be used to control the power delivered to a load.

The working principle of the IRF530STRR is straightforward. When a voltage is applied to the gate terminal, it attracts the electrons from the p-type region, which causes it to invert from p to n type. This inversion creates a depletion region, which increases the resistance between the source and the drain terminals. This results in a small reverse bias current, allowing the device to be used as a switch.

The IRF530STRR is capable of handling high-frequency switching tasks, such as temperature and pressure control, power switching, and power inverters. It is also used in various circuits as a voltage regulator, such as those used in high-performance audio systems, digital camera circuits, and automotive applications. The device is also used as a power amplifier in some applications, such as in mobile phones.

Overall, the IRF530STRR is an excellent choice for a wide range of applications requiring high speed switching and power dissipation. Its low on-state resistance, high-frequency operation, and EMI suppression make it ideal for a variety of applications. Additionally, its rugged design and over-voltage protection make it a reliable choice for a range of applications. As such, it is an excellent choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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