IRF5800TR Allicdata Electronics
Allicdata Part #:

IRF5800TR-ND

Manufacturer Part#:

IRF5800TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 30V 4A 6-TSOP
More Detail: P-Channel 30V 4A (Ta) 2W (Ta) Surface Mount Micro6...
DataSheet: IRF5800TR datasheetIRF5800TR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: Micro6™(TSOP-6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 85 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRF5800TR is a type of Field Effect Transistor (FET) with a single gate, often referred to as a MOSFET. It is used in a variety of applications, including in power amplifiers, power supplies, and other circuits requiring efficient power conversion and switching.

IRF5800TR Structure

The IRF5800TR is constructed of two separate components: a metal oxide semiconductor (MOS) transistor, and a metal gate. The MOS transistor is made up of three layers: a gate, a source, and a drain. A conducting channel is created between the source and drain by applying a voltage to the gate. The gate of the transistor is usually an insulating layer of some sort.

The metal gate is what determines the characteristics of the FET, such as the drain-source resistance and the gate threshold voltage (VGS). It is typically made from an alloy or metal oxides. The gate of an IRF5800TR is typically made from a variety of titanium nitride or a platinum silicide.

IRF5800TR Operating Principles

In order to understand the operating principles of the IRF5800TR, it is important to understand the basics of how FETs work. FETs rely on electric fields to control the current flow between the source and drain. This is done by controlling the voltage applied to the gate. When the voltage is increased, the electric field created by the gate increases, which in turn increases the conductivity of the channel between the source and drain. This allows more current to flow, increasing the power output of the FET.

When the voltage applied to the gate is decreased, the electric field is reduced, which reduces the conductivity of the channel between the source and drain. This reduces the power output of the FET. By controlling the voltage applied to the gate, the current flowing between the source and drain can be controlled, which is why FETs are often used as switches in various circuits.

IRF5800TR Applications

The IRF5800TR can be used in a variety of applications, such as in power amplifiers, power supplies, and other circuits that require efficient power conversion and switching. The FET can be configured to make audio amplifiers, voltage controllers, motor controlling systems, and voltage regulators. It can also be used in electrostatic discharge (ESD) protection systems, as it has a low breakdown voltage and a high input resistance.

IRF5800TRs are also commonly used in switched mode power supplies and high-frequency switching applications. In these types of applications, the FET can be used to switch power on and off quickly and efficiently with little power loss. The FET can also be used as a solid-state relay, as it can switch large currents and voltages with low power losses.

Conclusion

The IRF5800TR is a type of Field Effect Transistor (FET) with a single gate, often referred to as a MOSFET. It is used in a variety of applications, including in power amplifiers, power supplies, and other circuits requiring efficient power conversion and switching. It is a highly efficient device, as it allows for fast and efficient switching of power with very little power loss. The IRF5800TR is an ideal choice for various applications, such as audio amplifiers, voltage controllers, motor controlling systems, voltage regulators, ESD protection systems, and more.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "IRF5" Included word is 40
Part Number Manufacturer Price Quantity Description
IRF540STRLPBF Vishay Silic... 0.79 $ 6400 MOSFET N-CH 100V 28A D2PA...
IRF540ZSPBF Infineon Tec... 0.0 $ 1000 MOSFET N-CH 100V 36A D2PA...
IRF5800TRPBF Infineon Tec... -- 1000 MOSFET P-CH 30V 4A 6-TSOP...
IRF530NS Infineon Tec... -- 1000 MOSFET N-CH 100V 17A D2PA...
IRF530STRR Vishay Silic... 0.0 $ 1000 MOSFET N-CH 100V 14A D2PA...
IRF5802TR Infineon Tec... -- 1000 MOSFET N-CH 150V 0.9A 6-T...
IRF5803TRPBF Infineon Tec... -- 1000 MOSFET P-CH 40V 3.4A 6-TS...
IRF540STRL Vishay Silic... 0.0 $ 1000 MOSFET N-CH 100V 28A D2PA...
IRF5800TR Infineon Tec... -- 1000 MOSFET P-CH 30V 4A 6-TSOP...
IRF5305LPBF Infineon Tec... -- 1000 MOSFET P-CH 55V 31A TO-26...
IRF5803TR Infineon Tec... -- 1000 MOSFET P-CH 40V 3.4A 6-TS...
IRF530 STMicroelect... -- 1000 MOSFET N-CH 100V 14A TO-2...
IRF5806 Infineon Tec... 0.0 $ 1000 MOSFET P-CH 20V 4A 6-TSOP...
IRF5802TRPBF Infineon Tec... -- 1000 MOSFET N-CH 150V 0.9A 6-T...
IRF520NLPBF Infineon Tec... 0.0 $ 1000 MOSFET N-CH 100V 9.7A TO-...
IRF520NSTRLPBF Infineon Tec... -- 1600 MOSFET N-CH 100V 9.7A D2P...
IRF510PBF Vishay Silic... -- 1900 MOSFET N-CH 100V 5.6A TO-...
IRF540NSPBF Infineon Tec... -- 513 MOSFET N-CH 100V 33A D2PA...
IRF5210STRLPBF Infineon Tec... -- 1000 MOSFET P-CH 100V 38A D2PA...
IRF5804TR Infineon Tec... 0.0 $ 1000 MOSFET P-CH 40V 2.5A 6-TS...
IRF540PBF Vishay Silic... -- 2748 MOSFET N-CH 100V 28A TO-2...
IRF5801TRPBF Infineon Tec... -- 1000 MOSFET N-CH 200V 600MA 6-...
IRF540NL Infineon Tec... 0.0 $ 1000 MOSFET N-CH 100V 33A TO-2...
IRF540ZSTRR Infineon Tec... 0.0 $ 1000 MOSFET N-CH 100V 36A D2PA...
IRF510 Vishay Silic... -- 1000 MOSFET N-CH 100V 5.6A TO-...
IRF510STRL Vishay Silic... 0.0 $ 1000 MOSFET N-CH 100V 5.6A D2P...
IRF5803D2PBF Infineon Tec... 0.0 $ 1000 MOSFET P-CH 40V 3.4A 8-SO...
IRF520NS Infineon Tec... -- 1000 MOSFET N-CH 100V 9.7A D2P...
IRF5810 Infineon Tec... 0.0 $ 1000 MOSFET 2P-CH 20V 2.9A 6TS...
IRF5804TRPBF Infineon Tec... -- 1000 MOSFET P-CH 40V 2.5A 6-TS...
IRF5210PBF Infineon Tec... -- 5619 MOSFET P-CH 100V 40A TO-2...
IRF530STRLPBF Vishay Silic... -- 800 MOSFET N-CH 100V 14A D2PA...
IRF5800 Infineon Tec... 0.0 $ 1000 MOSFET P-CH 30V 4A 6-TSOP...
IRF5305PBF Infineon Tec... -- 1000 MOSFET P-CH 55V 31A TO-22...
IRF5852 Infineon Tec... 0.0 $ 1000 MOSFET 2N-CH 20V 2.7A 6-T...
IRF520N Infineon Tec... -- 1000 MOSFET N-CH 100V 9.7A TO-...
IRF520 STMicroelect... -- 1000 MOSFET N-CH 100V 10A TO-2...
IRF530STRRPBF Vishay Silic... -- 1000 MOSFET N-CH 100V 14A D2PA...
IRF520SPBF Vishay Silic... 1.1 $ 1000 MOSFET N-CH 100V 9.2A D2P...
IRF540ZLPBF Infineon Tec... 1.01 $ 557 MOSFET N-CH 100V 36A TO-2...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics