
Allicdata Part #: | IRF520NLPBF-ND |
Manufacturer Part#: |
IRF520NLPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 9.7A TO-262 |
More Detail: | N-Channel 100V 9.7A (Tc) 3.8W (Ta), 48W (Tc) Throu... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 48W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 330pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 5.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.7A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRF520NLPBF transistors are most commonly used in power supply circuits, switching circuits, and low voltage signal circuits. They are type of field-effect transistors (FETs) in the single n-channel junction type. FETs are unipolar transistors that control the flow of electricity from the drain (polarity) to the source (unipolarity) and features less input capacitance than a bipolar transistor.
The IRF520NLPBF is the insulated gate type transistor and uses the majority current to trigger and control the drain current. This insulated gate type FET has a higher input impedance than the conventional junction type and is suitable for switching circuit and signal circuit applications. It can be used as an electronic switch or gate, making it ideal for power supply, motor control and other similar applications.
The MOSFET is an acronym for Metal Oxide Semiconductor Field Effect Transistor. It has a higher input impedance compared to a conventional junction type transistor, is suitable for high frequency transistor applications, and has high switching speed. The IRF520NLPBF is a single n-channel depletion type MOSFET, meaning that it has an additional gate electrode to increase its input impedance, thus allowing for higher switching speeds and superior performance.
The working principle of the IRF520NLPBF is straightforward. When a positive voltage is applied to the gate, the voltage between the source and the drain opens up, allowing current to flow from the drain to the source. When a negative voltage is applied to the gate, the voltage between the source and the drain closes, stopping current flow from the drain to the source. This is the basic principle of operation of an n-channel MOSFET.
The IRF520NLPBF is a versatile transistor with a wide range of applications. It is commonly used in power supply circuits and other circuits that require switching speeds of up to 500kHz. It is also used in low voltage signal circuits due to its high input impedance and superior performance. It can also be used as an electronic switch or gate, making it ideal for motor control, communication circuits, and other applications.
In conclusion, the IRF520NLPBF is a single n-channel junction type transistor that is used in power supply circuits, switching circuits and low voltage signal circuits. Its working principle is based on the principle of opening and closing the voltage between the source and the drain by applying a positive or negative voltage to the gate. It has a wide range of applications and is an ideal choice for applications where high speed switching is required.
The specific data is subject to PDF, and the above content is for reference
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