Allicdata Part #: | IRF5806-ND |
Manufacturer Part#: |
IRF5806 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 20V 4A 6-TSOP |
More Detail: | P-Channel 20V 4A (Ta) 2W (Ta) Surface Mount Micro6... |
DataSheet: | IRF5806 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | Micro6™(TSOP-6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 594pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 11.4nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 86 mOhm @ 4A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IRF5806 is a Field-Effect Transistor (FET) device, specifically a Power Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). It is designed for high current, low voltage applications and works by controlling current flow between two terminals, the source and the drain, by modifying the voltage between them. It is mainly used in power management and can be found in various applications such as switch-mode power supplies, converters, motor control circuits, and automotive applications. In this article, we will look at the applications and working principle of IRF5806.
Applications of IRF5806
IRF5806 is mainly used in power management applications. It is widely used in motor control circuits, DC-DC converters, switch mode power supplies, and automotive applications such as variable speed wiper controls, air conditioning systems, and traction control systems. In motor control circuits, the IRF5806 is used as a switch to control the current flow to the dc motors, thereby allowing for variable speed adjustments. In DC-DC converters, it is used as a switch to control the quantity of power flowing through the circuit and in this manner, it helps to step up or step down the voltage as required. Similarly, in switch-mode power supplies, the IRF5806 is used as a switch to control the current flow from the source to the load and can be used to switch the high-frequency current pulses to regulate the output voltage. In automotive applications, the IRF5806 is used as a switch to control the current flow in traction control systems, variable speed wiper controls, and air-conditioning systems.
Working Principle of IRF5806
The IRF5806 is a FET device that works by controlling current flow between the source and the drain by modifying the voltage between them. Basically, the IRF5806 operates by creating an electrical field between the source and the drain by applying a voltage (gate voltage) at the gate terminal of the FET. This field opens a \'channel\' between the source and the drain, allowing the current to flow through. The current that flows through is inversely proportional to the voltage applied at the gate terminal, i.e. the higher the gate voltage, the lower the current and vice versa.
In addition to controlling the flow of current, the IRF5806 also acts as an amplifier. The voltage applied at the gate terminal is amplified and appears at the drain. This property can be used in applications that require the sensing or amplification of small amounts of current. For instance, the IRF5806 can be used as a current amplifier in light sensing circuits, or as a voltage amplifier in audio amplifiers.
Conclusion
The IRF5806 is a Power MOSFET that can be used in many applications that require power management and control. It is commonly used in motor control circuits, DC-DC converters, switch mode power supplies, and automotive applications. The working principle of the IRF5806 is to create an electrical field between the source and drain by applying a voltage at the gate terminal. This field opens a channel, allowing current to flow through. In addition, the IRF5806 also acts as an amplifier, amplifying the voltage applied at the gate terminal and appearing at the drain.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IRF5305LPBF | Infineon Tec... | -- | 1000 | MOSFET P-CH 55V 31A TO-26... |
IRF540A | ON Semicondu... | -- | 1000 | MOSFET N-CH 100V 28A TO-2... |
IRF540ZLPBF | Infineon Tec... | 1.01 $ | 557 | MOSFET N-CH 100V 36A TO-2... |
IRF530SPBF | Vishay Silic... | -- | 175 | MOSFET N-CH 100V 14A D2PA... |
IRF540SPBF | Vishay Silic... | -- | 501 | MOSFET N-CH 100V 28A D2PA... |
IRF510STRRPBF | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 5.6A D2P... |
IRF540 | STMicroelect... | -- | 1000 | MOSFET N-CH 100V 22A TO-2... |
IRF530 | STMicroelect... | -- | 1000 | MOSFET N-CH 100V 14A TO-2... |
IRF520 | STMicroelect... | -- | 1000 | MOSFET N-CH 100V 10A TO-2... |
IRF510 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 5.6A TO-... |
IRF520N | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 9.7A TO-... |
IRF510S | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 5.6A D2P... |
IRF520NS | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 9.7A D2P... |
IRF5210STRR | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 100V 40A D2PA... |
IRF530NS | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 17A D2PA... |
IRF530S | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 14A D2PA... |
IRF530STRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 14A D2PA... |
IRF540S | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 28A D2PA... |
IRF540STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 28A D2PA... |
IRF540STRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 28A D2PA... |
IRF5305STRR | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 55V 31A D2PAK... |
IRF530NL | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 17A TO-2... |
IRF540NL | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 33A TO-2... |
IRF5210L | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 100V 40A TO-2... |
IRF5305L | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 55V 31A TO-26... |
IRF530NSTRRPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 17A D2PA... |
IRF510L | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 5.6A TO-... |
IRF510STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 5.6A D2P... |
IRF510STRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 5.6A D2P... |
IRF520NL | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 9.7A TO-... |
IRF520NSTRL | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 9.7A D2P... |
IRF520NSTRR | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 9.7A D2P... |
IRF520S | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 9.2A D2P... |
IRF520STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 9.2A D2P... |
IRF520STRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 9.2A D2P... |
IRF530L | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 14A TO-2... |
IRF530STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 14A D2PA... |
IRF540L | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 28A TO-2... |
IRF5806 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 20V 4A 6-TSOP... |
IRF5803 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 40V 3.4A 6-TS... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...