IRF5305LPBF

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The IFR5305LPBF is a popular high-performance, low standby power N-Channel MOSFET. It has a 50V Vds and a -400mΩ Rds(on). This transistor is commonly used in a wide variety of different applications. Whether you are working on high voltage power supplies, ballasted fluorescent lamps, motor controls, or digital and analog switching circuits, you will find the IFR5305LPBF is often the best fit for the job. Let’s explore the IFR5305LPBF application field and working principle in more detail.

Application Field

The IFR5305LPBF is capable of handling a maximum continuous drain source voltage of 50V, as well as a maximum continuous gate source voltage of 20V. It can handle continuous drain current at 25°C of up to 28A. It is suitable for both switching and linear applications, and its wide gate voltage range allows it to be used in a variety of designs.

This MOSFET can be used for a variety of purposes, including high voltage power supplies, ballasted fluorescent lamps, motor controls, or digital and analog switching circuits. It can also be used in non-PFC solutions such as dimming circuits, LED drivers, and welding power supplies. In addition, its low RDS (on) makes it perfect for use in high-efficiency, low standby power applications.

Overall, the IFR5305LPBF has many distinct advantages over other types of transistors, making it a popular choice for many applications.

Working Principle

The IFR5305LPBF is a type of MOSFET, or metal oxide semiconductor field-effect transistor. This type of transistor uses an insulated gate terminal to control the current through the device. This control terminal is connected to the source of the N-type semiconductor area, and the current is controlled by applying a voltage to the gate.

MOSFETs offer many advantages over other types of transistors, such as low power consumption, low threshold voltage, and high switching speed. Additionally, their gate is insulated from the rest of the device, making them well-suited for applications where high voltages are present.

The IFR5305LPBF has a breakdown voltage of 50V, a maximum drain source voltage of 50V, and a maximum gate to source voltage of 20V. It also has a low RDS (on), which makes it an ideal choice for high-efficiency, low standby power applications.

Conclusion

The IFR5305LPBF is a popular high-performance, low standby power N-Channel MOSFET. It can be used in a variety of applications, including high voltage power supplies, ballasted fluorescent lamps, motor controls, digital and analog switching circuits, and non-PFC solutions such as dimming circuits and LED drivers. Its low RDS (on) makes it perfect for use in high-efficiency, low standby power applications. The IFR5305LPBF has a breakdown voltage of 50V and a maximum gate to source voltage of 20V, making it capable of handling both switching and linear applications.

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