Allicdata Part #: | IRF510STRL-ND |
Manufacturer Part#: |
IRF510STRL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 5.6A D2PAK |
More Detail: | N-Channel 100V 5.6A (Tc) 3.7W (Ta), 43W (Tc) Surfa... |
DataSheet: | IRF510STRL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 43W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 180pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 8.3nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 540 mOhm @ 3.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.6A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRF510STRL is a common field-effect transistor (FET); specifically, a single-gate silicon-controlled rectifier (SCR). A field-effect transistor is a type of transistor that is controlled by the electrical field generated by a gate. FETs have a number of advantages over bipolar transistors: they are usually more efficient, have lower capacitance, and are able to pass higher current when turned on.
The IRF510STRL is a single-gate FET that can be used in a variety of applications, such as low-power switch-mode power supplies, discrete amplifiers, phase-control circuits, DC and AC motor-control circuits, and high-frequency switching. The IRF510STRL has a high maximum drain-source voltage (100V) and can be used in higher voltage applications than other FETs.
The working principle of the IRF510STRL is based on the basic field-effect transistor design. A small electric field is created by the gate when current or voltage is applied to it. This electric field creates a channel in the semiconductor material that allows electrons to move from the source to the drain of the transistor. The resistance of this channel is determined by the current or voltage applied to the gate. The greater the voltage or current applied to the gate, the lower the resistance. This property is what makes the IRF510STRL useful in applications such as high-frequency switching and motor-control circuits.
The IRF510STRL has the ability to handle large amounts of power, making it ideal for applications such as switch-mode power supplies and DC motor-control circuits. Its low capacitance makes it ideal for discrete amplifiers, and its high voltage rating allows for use in applications with higher voltages. Furthermore, the IRF510STRL\'s drain-source breakdown voltage rating is higher than other FETs, allowing for use in a variety of high-voltage applications.
In conclusion, the IRF510STRL is a single-gate FET that can be used in a variety of applications. Its low capacitance and high voltage rating make it ideal for use in high-frequency switching and motor-control circuits, while its breakdown voltage rating makes it applicable in a variety of high-voltage applications.
The specific data is subject to PDF, and the above content is for reference
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